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Growth of Centimeter-scale, Highly-ordered, and Continuous Graphene on Si-Layer/Metal Surfaces

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Abstract

Graphene (G), a two-dimensional crystal of carbon atoms arranged in the honeycomb structure, shows extraordinary physical properties such as outstanding electronic mobility, higher than silicon or copper, it is one of the strongest materials found in nature, only comparable to diamond, and at the same time one of the softest, being a unique example of a metallic membrane. We have developed a new strategy for graphene growth on metallic Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture, produced by silicon-layer intercalation approach (SIA), was characterized and experiments have shown the high structural and electronic qualities of this new composite, and the striking differences between this material from graphene obtained by previous methods. The SIA eliminates the need for the graphene transfer and also allows for an atomic control of the distance between the graphene and the metal gate, opening doors for a new generation of graphene-based materials with tailored properties.

© 2013 Optical Society of America

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