1.53μ m EML Fabricated by Ion-Implantation Induced QWI with Etching Implant Buffer Layer

Liangshun Han; Song Liang; Hongliang Zhu; Can Zhang; Wei Wang

doi:10.1364/ACPC.2013.AF2B.31

Asia Communications and Photonics Conference 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper AF2B.31
•https://doi.org/10.1364/ACPC.2013.AF2B.31

1.53μ m EML Fabricated by Ion-Implantation Induced QWI with Etching Implant Buffer Layer

Liangshun Han, Song Liang, Hongliang Zhu, Can Zhang, and Wei Wang

Asia Communications and Photonics Conference 2013

Beijing China
12–15 November 2013
ISBN: 978-1-55752-989-3

From the session
ACP/IPOC Subcommittee 1 Poster Session (AF2B)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
L. Han, S. Liang, H. Zhu, C. Zhang, and W. Wang, "1.53μ m EML Fabricated by Ion-Implantation Induced QWI with Etching Implant Buffer Layer," in Asia Communications and Photonics Conference 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper AF2B.31.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

We present a 1.53μ m electroabsorption modulated distributed feedback laser (EML) fabricated by ion-implantation induced quantum well intermixing (QWI) with etching implant buffer layer. This simple QWI technique can suppress band-edge shift of laser region. The EML exhibits a 18dB@-5 V DC extinction ratio.

PDF Article

Previous Article Next Article