Fabrication and characterization of photo-detector based on CdSe0.5S0.5 quantum dots

J. Song; Y. Xing; Y. H. An; Y. H. An; P. G. Li; P. G. Li; W. H. Tang; W. H. Tang; J. H. Xiao; J. H. Xiao

doi:10.1364/ACPC.2013.AF2B.23

Asia Communications and Photonics Conference 2013
OSA Technical Digest (online) (Optica Publishing Group, 2013),
paper AF2B.23
•https://doi.org/10.1364/ACPC.2013.AF2B.23

Fabrication and characterization of photo-detector based on CdSe_0.5S_0.5 quantum dots

J. Song, Y. Xing, Y. H. An, P. G. Li, W. H. Tang, and J. H. Xiao

Asia Communications and Photonics Conference 2013

Beijing China
12–15 November 2013
ISBN: 978-1-55752-989-3

From the session
ACP/IPOC Subcommittee 1 Poster Session (AF2B)

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J. Song, Y. Xing, Y. H. An, P. G. Li, W. H. Tang, and J. H. Xiao, "Fabrication and characterization of photo-detector based on CdSe0.5S0.5 quantum dots," in Asia Communications and Photonics Conference 2013, OSA Technical Digest (online) (Optica Publishing Group, 2013), paper AF2B.23.

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Abstract

In this presentation, a quantum dots (QDs) photo-detector was fabricated. CdSe_0.5S_0.5 QDs was synthesized by chemical colloidal route. The average size is about 7 nm in diameter. The conventional optical lithography technique was used to fabricate gold tip-to-tip structure with the gap size ~ 20 μm. The photo-detector was made by assembling CdSe_0.5S_0.5 QDs into electrodes using dielectrophoresis (DEP) process. The opto-electrical transport properties of the fabricated photo-detector were measured and an obvious photoconductive behavior was observed, demonstrated a capable of potential application in optoelectronics device.

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