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Performance enhancement of InGaN/GaN LEDs by using localized surface plasmons: problems and possible solutions

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Abstract

Localized surface plasmon effects due to Ag and Ag/SiO2 nanoparticles deposited on GaN/InGaN multi-quantum well light-emitting diode structures were studied. The enhanced photoluminescence efficiency was attributed to energy coupling between the quantum well and surface plasmon in the nanoparticles.

© 2012 Optical Society of America

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