Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Improvement in efficiency droop of GaN-based light-emitting diodes by optimization of active regions

Not Accessible

Your library or personal account may give you access

Abstract

In this paper, we propose several methods to improve the efficiency droop of GaN-based light-emitting diodes by optimization of active regions, such as alternative substrates, semi-polar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.

© 2012 Optical Society of America

PDF Article
More Like This
Efficiency Droop Improvement in InGaN/GaN Light-emitting Diodes by Graded-composition Electron Blocking Layer

C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
C680 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011

Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells

C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
CWF4 CLEO: Science and Innovations (CLEO:S&I) 2011

Efficiency and droop improvement in InGaN/GaN lightemitting diodes by selectively carrier-distribution manipulation

Da-Wei Lin, Chao-Hsun Wang, Shih-Pang Chang, Pu-Hsih Ku, Yu-Pin Lan, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, and Chun-Yen Chang
JTh2A.73 CLEO: Applications and Technology (CLEO:A&T) 2012

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved