Abstract
In this paper, we propose several methods to improve the efficiency droop of GaN-based light-emitting diodes by optimization of active regions, such as alternative substrates, semi-polar MQWs, insertion layer, graded-thickness MQWs, and graded-composition EBL.
© 2012 Optical Society of America
PDF ArticleMore Like This
C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
C680 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011
C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
CWF4 CLEO: Science and Innovations (CLEO:S&I) 2011
Da-Wei Lin, Chao-Hsun Wang, Shih-Pang Chang, Pu-Hsih Ku, Yu-Pin Lan, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, and Chun-Yen Chang
JTh2A.73 CLEO: Applications and Technology (CLEO:A&T) 2012