Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ACPC > 2012 > AS1H > AS1H.5

GaSb-based laser monolithically grown on Si substrate operating under cw at room temperature

E. Tournié, J. R. Reboul, K. Madiomanana, L. Cerutti, and J. B. Rodriguez

Open Access Open Access

Abstract

GaSb-based devices allow covering the whole near- to mid-IR wavelength range. We will present our results in developing 1.55 µm lasers and their direct integration onto Si substrates.

© 2012 Optical Society of America

PDF Article
More Like This
Demonstration of laser operation at room-temperature of an Sb-based mid-infrared multi-quantum-well structure monolithically grown on a Silicon substrate

J. B. Rodriguez, L. Cerutti, and E. Tournié
CPDA4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Room temperature CW operation of 1.3um quantum dot lasers on a Si substrate by Pd-mediated wafer bonding

Zihao Wang, Stefan Preble, Chi-sen Lee, and Wei Guo
IM4B.4 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2015

Room temperature, continuous wave operation of an Sb-based laser grown on GaAs substrate

L. Cerutti, J. B. Rodriguez, P. Grech, and E. Tournié
CTuGG4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use