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Conferences > ACPC > 2012 > AS1H > AS1H.3

Structural and optical characterization of highly-strained BInGaAs/GaAs quantum wells

Zhigang Jia, Qi Wang, Xiaomin Ren, Yingce Yan, Shiwei Cai, Xia Zhang, Yongqing Huang, and Xiaofeng Duan

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Abstract

Highly-strained BInGaAs/GaAs quantum wells have been grown at low temperature by incorporating boron element into InGaAs/GaAs quantum wells. The effects of boron incorporation on the structural and optical properties of highly-strained InGaAs/GaAs QWs been investigated.

© 2012 Optical Society of America

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