Light Extraction Efficiency in III-Nitride LEDs

S. J. Chang

doi:10.1364/ACPC.2012.AS1F.4

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper AS1F.4
•https://doi.org/10.1364/ACPC.2012.AS1F.4

Light Extraction Efficiency in III-Nitride LEDs

S. J. Chang

Asia Communications and Photonics Conference 2012

Guangzhou China
7–10 November 2012
ISBN: 978-1-55752-957-2

From the session
Approaches for High Efficiency and White LEDs (AS1F)

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S. J. Chang, "Light Extraction Efficiency in III-Nitride LEDs," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper AS1F.4.

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Abstract

Light extraction efficiency (LEE) of GaN-based LEDs is limits mainly by the high refractive index of GaN. We will introduce methods proposed previously and present new methods to further enhance LEE of GaN-based LEDs.

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