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Conferences > ACPC > 2012 > AF4B > AF4B.41

Growth and characterization of GaAs/InxGa1-xAs/GaAs axial heterostructure nanowires by MOCVD

Xiaolong Lv, Xia Zhang, Xin Yan, Jiangong Cui, Junshuai Li, Yongqing Huang, and Xiaomin Ren

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Abstract

We report on the Au-assisted growth of GaAs/InxGa1-xAs/GaAs axial double-heterostructure nanowires via metalorganic chemical vapor deposition (MOCVD) technique. The influence of indium content in Au particle on the morphology of nanowires was investigated systematically. The experimental results were thought to be related with the composition characteristic of the alloy catalyst as well as the Vapor-Liquid-Solid (VLS) growth mechanism.

© 2012 Optical Society of America

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