Bandgap Engineering of InGaAsP/InP Laser Structure by Argon Plasma Induced Point Defects

Mohammad Kaleem; Xin Zhang; Jian-Jun He

doi:10.1364/ACPC.2012.AF4A.12

Asia Communications and Photonics Conference
OSA Technical Digest (online) (Optica Publishing Group, 2012),
paper AF4A.12
•https://doi.org/10.1364/ACPC.2012.AF4A.12

Bandgap Engineering of InGaAsP/InP Laser Structure by Argon Plasma Induced Point Defects

Mohammad Kaleem, Xin Zhang, and Jian-Jun He

Asia Communications and Photonics Conference 2012

Guangzhou China
7–10 November 2012
ISBN: 978-1-55752-957-2

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Poster Session I (AF4A)

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M. Kaleem, X. Zhang, and J. He, "Bandgap Engineering of InGaAsP/InP Laser Structure by Argon Plasma Induced Point Defects," in Asia Communications and Photonics Conference, OSA Technical Digest (online) (Optica Publishing Group, 2012), paper AF4A.12.

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Abstract

Blue shift of the bandgap in InGaAsP/InP quantum well structure is demonstrated experimentally. The technique depends upon generation of point defects via plasma induced damage during deposition of sputtered SiO₂ followed by rapid thermal annealing.

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