Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth

Yongbo Shao; Lingjuan Zhao; Hongyan Yu; Jiaoqing Pan; Baojun Wang; Hongliang Zhu; Wei Wang

doi:10.1364/ACP.2011.83081W

Optoelectronic Materials and Devices
Proceedings of SPIE (Optica Publishing Group, 2011),
paper 83081W
•https://doi.org/10.1364/ACP.2011.83081W

Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth

Yongbo Shao, Lingjuan Zhao, Hongyan Yu, Jiaoqing Pan, Baojun Wang, Hongliang Zhu, and Wei Wang

Asia Communications and Photonics Conference and Exhibition 2011

Shanghai China
13–16 November 2011
ISBN: 978-0-8194-8956-2

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Y. Shao, L. Zhao, H. Yu, J. Pan, B. Wang, H. Zhu, and W. Wang, "Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth," in Optoelectronic Materials and Devices, G. Duan, ed., Vol. 8308 of Proceedings of SPIE (Optica Publishing Group, 2011), paper 83081W.

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Abstract

A dual-depletion-region lumped electroabsorption modulator (DDR-LEAM) based on InP at 1550nm is designed and fabricated. The measurement results reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. The simulation results show that the highly doped charge layer can concentrate almost all of the external applied voltage in MQW region and thus contribute to the identical extinction ratio curves. The expected 3-dB bandwidth of the DDR-LEAMs using an equivalent circuit model is more than twice lager than that of the conventional LEAM.

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