Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Theoretical estimation of optical absorption coefficient inside an InAs/InGaAs semiconductor Quantum Dot

Not Accessible

Your library or personal account may give you access

Abstract

In this work we extract a novel formula for optical absorption coefficient of Quantum Dots (QDs) in frame of 8band k.p modeling. Also this is useful for any other several band k.p frame. Using this formula, we analyze and simulate absorption spectra for a typical InAs/In0.4Ga0.6As QD, both for TE and TM components of absorption spectra. Size and alloy fraction of QD is chosen such that the absorption spectra has some components around 1.55 μm that will be applicable for single photon fiber optic communication.

© 2011 Optical Society of America

PDF Article
More Like This
Broadband InGaAs quantum dots-in-a-well solar cells

T. E. Tzeng, K. Y. Chuang, K. D. Tzeng, C. H. Chang, and T. S. Lay
C434 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011

Ultrafast Carrier Capture and Relaxation in InGaAs and InAs Self-Organized Quantum Dots

T. Sosnowski, J. Urayama, T. B. Norris, H. Jiang, J. Singh, K. Kamath, J. Phillips, and P. Bhattacharya
RMB2 Radiative Processes and Dephasing in Semiconductors (RPDS) 1998

Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Pengyu Wang, Qi Wang, Xin Guo, Zhigang Jia, Tianhe Li, Xiaomin Ren, and Shiwei Cai
83082C Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.