Abstract

200 µm free-standing polycrystalline diamond films were grown by microwave plasma chemical vapor deposition (MPCVD) method. The nucleation surfaces of diamond were characterized by XRD, Raman scattering, atomic force microscopy (AFM) method. An ultraviolet (UV) optoelectronic device was fabricated on diamond nucleation surface, showing clear modulation of channel current.

© OSA, IEEE Photonics Society, SPIE, COS, CIC

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