Abstract
The photoluminescence(PL) spectra at room temperature for the Si-based samples doped by Nd-O+ are measured. All the samples possess blue-violet PL properties and light emission is stable. The PL spectra has multiple peak structure. The intensity of PL spectra is relative to Nd and O+ implantation and the annealing temperature. The light emission is more greater for the sample of first O+ then Nd ion-implanted silicon than the one of first Nd then O+ ion-implanted silicon.
© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC
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