Add to BibSonomyAbstract
Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.
© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC
PDF ArticleMore Like This
Quantum well intermixing of InGaAsP/InP laser structure by sputtering Al2O3
Hongli Zhu, Yuan Zhuang, Xin Zhang, and Jian-Jun He
OF3C.3 Optoelectronic Devices and Integration (OEDI) 2014
Quantum wells intermixing in InGaAsP/InGaAsP Laser Structure for Photonic Integrated Circuits
Jongbum Nah and Patrick LiKamWa
JWB29 Conference on Lasers and Electro-Optics (CLEO:S&I) 2005
Novel Quantum Well Intermixing in InGaAs-InGaAsP Laser Structure Using Argon Plasma Exposure
T.C.L. Wee, B. S. Ooi, T. K. Ong, Y. L. Lam, Y. C. Chan, and G.I. Ng
CWF95 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000