Abstract
Further enhancement of the polarized emission efficiency of an InGaN/GaN single quantum well (QW) light-emitting diode (LED) with the QW coupling with surface plasmon generated on an Ag nano-grating structure on the top of the LED by inserting a SiO2 layer between semiconductor and metal is demonstrated.
© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC
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