Abstract

We report characteristics of the InGaN/GaN light emitting diodes (LEDs) with embedded air prisms (EAP) via a wet etching process. EAP LED output power was increased 2.1 times compared with the conventional LED due to the improvement in the scattering of photons at the EAP interface.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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