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Numerical Investigation of the Effect of Base Doping Density in Transistor VCSELs

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Abstract

Transistor VCSELs with different base doping densities are numerically modelled. The effect of the base doping density on both optical and electrical properties, i.e., laser threshold, optical power, slope efficiency, and electrical gain, is investigated.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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