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Conferences > ACP > 2009 > ThP > ThP5

Investigation of the Doping Profile Effect on Operation of Internally Q-Switched Laser Diodes Aiming at High-Power Picosecond Light Source

Brigitte Lanz, Sergey Vainshtein, Juha Kostamovaara, Vladimir Lantratov, and Nikolay Kaluzhniy

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Abstract

Lately demonstrated high-power (50W from 20µm stripe) picosecond (30ps) lasing from a laser diode has addressed us to internal Q-switching phenomenon, discovered four decades ago and not understood so far. We found that the realization of nanosecond or picosecond mode from a diode depends on doping profile across the structure.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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