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Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires

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Abstract

Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. Coulomb interaction between electron and hole is calculated by fast Fourier transformation. In our simulations, strain effects are considered. Finally, we obtain the exciton binding energy by solving 1D Schrodinger equation along the quantum wire direction.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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