Abstract
The relative intensity noise (RIN) characteristics in blue laser diodes on wurtzite AlGaInN MQW structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the band structures of the MQW active region by using the self-consistent multiband Hamiltonian for the strained wurtzite crystal structure.
© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC
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