Abstract

In this paper we investigate a practical technique for estimating the material gain and single pass gain spectrum of wide band Semiconductor Optical Amplifier (SOA) in swept source sensing applications. The relation between the SOA Amplified Spontaneous Emission (ASE) and single pass gain spectrum is practically explored and elaborated for this purpose. More than 200 nm gain spectrum is estimated and used to feed the design process of a recently developed MEMS based swept laser.

© 2016 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription