Abstract
Lasers based on monolayer (ML) transition-metal dichalcogenide semiconductor crystals have the potential for low threshold operation and a small device footprint; however, nanophotonic engineering is required to maximize the interaction between the optical fields and the three-atom-thick gain medium. Here, we develop a theoretical model to design a direct bandgap optically pumped nanophotonic integrated laser. Our device utilizes a gap-surface-plasmon optical mode to achieve subwavelength optical confinement and consists of a high-index GaP nanowire atop an ML film on an Ag substrate. The optical field and material medium are analyzed using a three dimensional finite-difference time-domain method and a first-principles calculation based on the density functional theory, respectively. The nanolaser is designed to have a threshold of under quasi-continuous wave operation on an excitonic transition at room temperature.
© 2016 Optical Society of America
Full Article | PDF ArticleMore Like This
Wen-Bo Shi, Lei Zhang, Di Wang, Rui-Li Zhang, Yingying Zhu, Li-Heng Zhang, Ruwen Peng, Wenzhong Bao, Ren-Hao Fan, and Mu Wang
Opt. Lett. 43(17) 4128-4131 (2018)
Runlin Miao, Zhiwen Shu, Yuze Hu, Yuxiang Tang, Hao Hao, Jie You, Xin Zheng, Xiang’ai Cheng, Huigao Duan, and Tian Jiang
Opt. Lett. 44(13) 3198-3201 (2019)
Feng Zhou and Wei Ji
Opt. Lett. 42(16) 3113-3116 (2017)