Electrical internal quantum efficiency improved by interval doping method

Ke Chen; Yuanyuan Wang; Xiaopeng Yu; Haishuo Wang; Rui Wu; Hongmei Zheng

doi:10.1364/AO.57.010072

Applied Optics
Vol. 57,
Issue 34,
pp. 10072-10082
(2018)
•https://doi.org/10.1364/AO.57.010072

Electrical internal quantum efficiency improved by interval doping method

Ke Chen, Yuanyuan Wang, Xiaopeng Yu, Haishuo Wang, Rui Wu, and Hongmei Zheng

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Ke Chen, Yuanyuan Wang, Xiaopeng Yu, Haishuo Wang, Rui Wu, and Hongmei Zheng, "Electrical internal quantum efficiency improved by interval doping method," Appl. Opt. 57, 10072-10082 (2018)

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- Optical Devices, Sensors, and Detectors
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About this Article
History
- Original Manuscript: August 17, 2018
- Revised Manuscript: October 27, 2018
- Manuscript Accepted: October 31, 2018
- Published: November 30, 2018

Abstract

Electrical internal quantum efficiency is an important parameter for evaluating the utilization degree of the photocurrent density. Amorphous silicon has a quite considerable absorption efficiency of the available incident light. However, the existence of substantial defects in heavily doping amorphous silicon limits the electrical internal quantum efficiency. In this paper, we propose the interval doping method for the amorphous silicon thin-film solar cells. Most of the hot carriers in the amorphous silicon layer will concentrate in the intrinsic region. Due to the lower recombination rate, more hot carriers could be collected by the electrodes. Through the coupled calculation of the optical field and the electric field, it is found that the proposed interval doping amorphous silicon thin-film solar cell’s electrical internal quantum efficiency is significantly enhanced. If the interval doping method is applied to both the top and bottom heavily doping regions, the short-circuit current density will be improved from 9.77 to $12.30 mA / {cm}^{2}$ , and the maximum output power will increase from 6.79 to $8.03 W / {cm}^{2}$ . All these results indicate that the interval doping method is suitable for improving the performance of the amorphous silicon thin-film solar cells.

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		$p ++$ Region	Intrinsic Region	$n ++$ Region
	$N_{D 0}$ , $N_{A 0}$ ( ${cm}^{- 3} / eV$ )	$1.4 \times 10^{20}$ , $1.4 \times 10^{20}$	$1.0 \times 10^{17}$ , $1.0 \times 10^{17}$	$1.4 \times 10^{20}$ , $1.4 \times 10^{20}$
DD and DA	$E^{+ / 0}$ , $E^{0 / -}$ ( $eV$ )	1.10, 1.35	0.725, 1.025	0.40, 0.65
	FWHM ( $eV$ )	0.4	0.2	0.4
BC and BV	$N_{C}^{0}, N_{V}^{0}$ ( ${cm}^{- 3} / eV$ )	$2 \times 10^{21}$ , $2 \times 10^{21}$	$2 \times 10^{21}$ , $2 \times 10^{21}$	$2 \times 10^{21}$ , $2 \times 10^{21}$
	$E_{C}$ , $E_{V}$ (eV)	1.78, 0	1.78, 0	1.78, 0
	$E_{C}^{0}, E_{V}^{0}$ (eV)	0.037, 0.045	0.020, 0.045	0.037, 0.081

		$p ++$ Region	Intrinsic Region	$n ++$ Region
Band parameters	$E_{g} (eV$ )	1.78	1.78	1.78
	$N_{c}$ , $N_{v}$ ( ${cm}^{- 3} / eV$ )	$1 \times 10^{20}$ , $1 \times 10^{20}$	$1 \times 10^{20}$ , $1 \times 10^{20}$	$1 \times 10^{20}$ , $1 \times 10^{20}$
	$ϵ$ , $χ$ (eV)	11.9, 3.9	11.9, 3.9	11.9, 3.9
Boltzmann constant	$k_{B}$ (J/K)	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$
Temperature	$T$ (K)	300	300	300
Diffusion coefficient	$D_{n}, D_{p}$ ( ${cm}^{2} / s$ )	0.65, 0.13	0.65, 0.13	0.65, 0.13
Mobility	$μ_{n}$ , $μ_{p}$ ( ${cm}^{2} / V \cdot s$ )	25, 5	20, 5	25, 5
Doping	$N_{a}$ , $N_{d}$ ( ${cm}^{- 3}$ )	$1 \times 10^{20}$ , 0	0, 0	0, $1 \times 10^{20}$
Thermal velocity	$v_{th, n}$ , $v_{th, p}$ (cm/s)	$2 \times 10^{7}$ , $1.5 \times 10^{7}$	$2 \times 10^{7}$ , $1.5 \times 10^{7}$	$2 \times 10^{7}$ , $1.5 \times 10^{7}$
Neutral capture cross section	$σ_{0}$ ( ${cm}^{- 2}$ )	$3 \times 10^{- 14}$	$1 \times 10^{- 14}$	$3 \times 10^{- 14}$

Parameters	P-TFSC	TID-TFSC	G-TFSC	BID-TFSC	TB-TFSC
$J_{sc}$ ( $mA / {cm}^{2}$ )	9.77	10.23 (4.71%)	10.92 (11.77%)	11.80 (20.78%)	12.30 (25.90%)
$V_{oc}$ (V)	0.91	0.91 (0%)	0.92 (1.10%)	0.91 (0%)	0.90 (−1.10%)
FF (%)	76.10	74.95 (−1.51%)	76.20 (0.1%)	72.33 (−4.95%)	72.47 (−4.78%)
$P_{\max}$ ( $mW / {cm}^{2}$ )	6.79	6.97 (2.65%)	7.68 (13.11%)	7.74 (14.00%)	8.03 (18.26%)

		$p ++$ Region	Intrinsic Region	$n ++$ Region
	$N_{D 0}$ , $N_{A 0}$ ( ${cm}^{- 3} / eV$ )	$1.4 \times 10^{20}$ , $1.4 \times 10^{20}$	$1.0 \times 10^{17}$ , $1.0 \times 10^{17}$	$1.4 \times 10^{20}$ , $1.4 \times 10^{20}$
DD and DA	$E^{+ / 0}$ , $E^{0 / -}$ ( $eV$ )	1.10, 1.35	0.725, 1.025	0.40, 0.65
	FWHM ( $eV$ )	0.4	0.2	0.4
BC and BV	$N_{C}^{0}, N_{V}^{0}$ ( ${cm}^{- 3} / eV$ )	$2 \times 10^{21}$ , $2 \times 10^{21}$	$2 \times 10^{21}$ , $2 \times 10^{21}$	$2 \times 10^{21}$ , $2 \times 10^{21}$
	$E_{C}$ , $E_{V}$ (eV)	1.78, 0	1.78, 0	1.78, 0
	$E_{C}^{0}, E_{V}^{0}$ (eV)	0.037, 0.045	0.020, 0.045	0.037, 0.081

		$p ++$ Region	Intrinsic Region	$n ++$ Region
Band parameters	$E_{g} (eV$ )	1.78	1.78	1.78
	$N_{c}$ , $N_{v}$ ( ${cm}^{- 3} / eV$ )	$1 \times 10^{20}$ , $1 \times 10^{20}$	$1 \times 10^{20}$ , $1 \times 10^{20}$	$1 \times 10^{20}$ , $1 \times 10^{20}$
	$ϵ$ , $χ$ (eV)	11.9, 3.9	11.9, 3.9	11.9, 3.9
Boltzmann constant	$k_{B}$ (J/K)	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$	$1.38 \times 10^{- 23}$
Temperature	$T$ (K)	300	300	300
Diffusion coefficient	$D_{n}, D_{p}$ ( ${cm}^{2} / s$ )	0.65, 0.13	0.65, 0.13	0.65, 0.13
Mobility	$μ_{n}$ , $μ_{p}$ ( ${cm}^{2} / V \cdot s$ )	25, 5	20, 5	25, 5
Doping	$N_{a}$ , $N_{d}$ ( ${cm}^{- 3}$ )	$1 \times 10^{20}$ , 0	0, 0	0, $1 \times 10^{20}$
Thermal velocity	$v_{th, n}$ , $v_{th, p}$ (cm/s)	$2 \times 10^{7}$ , $1.5 \times 10^{7}$	$2 \times 10^{7}$ , $1.5 \times 10^{7}$	$2 \times 10^{7}$ , $1.5 \times 10^{7}$
Neutral capture cross section	$σ_{0}$ ( ${cm}^{- 2}$ )	$3 \times 10^{- 14}$	$1 \times 10^{- 14}$	$3 \times 10^{- 14}$

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Applied Optics