Abstract

A planar waveguide structure in a chalcohalide glass was fabricated by dual-energy C ion implantation with energies of 5.5 and 6.0 MeV at fluences of $7.0\times {10}^{14}$ and $8.0\times {10}^{14}\mathrm{ions}{\mathrm{cm}}^{-2}$, respectively. A waveguide with a thickness of 5.9 μm was formed. SRIM 2013 was used to simulate the defect distribution fabricated by C ion implantation. Images of the polished end face of the C-implanted chalcohalide glass were measured with a metallographic microscope using reflected polarized light. The micro-Raman spectra were measured in air. The near-field intensity distributions were investigated at visible (633 nm) and near-infrared (1300, 1400, and 1539 nm) bands.

© 2014 Optical Society of America

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