A novel design based on an asymmetrically graded-well, Ala→bGa1−a→1−bN/AlcGa1−cN, where b > c > a, to enhance the optical matrix element of radiative transitions in an AlGaN based UV-LED, is theoretically studied.

© 2013 Optical Society of America

PDF Article
More Like This
Dip-shaped AlGaN/AlN Quantum Well Structures with high TE-polarized Optical Gain

Seoung-Hwan Park and Joing-In Shim
TuPH_2 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2013

246 nm AlN-delta-GaN Quantum Well Ultraviolet Light-Emitting Diode

Cheng Liu, Yu Kee Ooi, SM Islam, Huili (Grace) Xing, Debdeep Jena, and Jing Zhang
STh3I.7 CLEO: Science and Innovations (CLEO_SI) 2017

Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes

Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, and Shing-Chung Wang
JW2A.94 CLEO: Applications and Technology (CLEO_AT) 2013


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription