Abstract
The mesoporous PbI2 was demonstrated as the scaffold for the crystal growth of CH3NH3PbI3 in sequential deposition process. A remarkable power conversion efficiency (PCE) of 18.1% was achieved in regular planar heterojunction structure under AM 1.5G 100 mW·cm-2 solar irradiation. Correlations between the PbI2 film morphology and the perovskite device performance have been established.
© 2015 Optical Society of America
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