Silicon Photonics: silicon nitride versus silicon-on-insulator

Roel Baets; Roel Baets; Ananth Z. Subramanian; Ananth Z. Subramanian; Stéphane Clemmen; Stéphane Clemmen; Bart Kuyken; Bart Kuyken; Peter Bienstman; Peter Bienstman; Nicolas Le Thomas; Nicolas Le Thomas; Günther Roelkens; Günther Roelkens; Dries Van Thourhout; Dries Van Thourhout; Philippe Helin; Simone Severi

doi:10.1364/OFC.2016.Th3J.1

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper Th3J.1
•https://doi.org/10.1364/OFC.2016.Th3J.1

Silicon Photonics: silicon nitride versus silicon-on-insulator

Roel Baets, Ananth Z. Subramanian, Stéphane Clemmen, Bart Kuyken, Peter Bienstman, Nicolas Le Thomas, Günther Roelkens, Dries Van Thourhout, Philippe Helin, and Simone Severi

Optical Fiber Communication Conference 2016

Anaheim, California United States
20–22 March 2016
ISBN: 978-1-943580-07-1

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Silicon Photonics I (Th3J)

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R. Baets, A. Z. Subramanian, S. Clemmen, B. Kuyken, P. Bienstman, N. Le Thomas, G. Roelkens, D. Van Thourhout, P. Helin, and S. Severi, "Silicon Photonics: silicon nitride versus silicon-on-insulator," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper Th3J.1.

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Abstract

Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.

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