Abstract

Tensile-strained side silicon nitride stressors were proposed and shown to be an effective way to reduce Ith and improve ηwp of Ge lasers. With the stressors and geometry optimizations, a ηwp of 25.2% and a Ith of 40.5mA (Jth = 30kA/cm2) can be achieved with a conservative defect limited carrier lifetime fixed at 1 nsec. These are tremendous improvements from the values without stressors or optimizations at 7.63% and 73.4 mA (Jth = 27.2 kA/cm2) respectively. These results give strong support to the Ge-on-Si laser technology.

© 2016 Optical Society of America

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