Abstract

Hybrid III-V/Si devices have been recently exploited for optical interconnects applications. In this work, a 0.2dB loss for the S, C and L bands, process tolerant, vertical evanescent coupling structure is presented.

© 2018 The Author(s)

PDF Article
This paper was not presented at the conference

More Like This
Control of Evanescent wave coupling in Hybrid III--V/SOI Nanolaser

A. Bazin, Y. Halioua, T. Karle, P. Monnier, F. Bordas, I. Sagnes, R. Raj, and F. Raineri
CK4_3 The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2011

III-V/SOI Vertical Cavity Laser with In-plane Output into a Si Waveguide

Gyeong Cheol Park, Weiqi Xue, Elizaveta Semenova, Kresten Yvind, Jesper Mørk, and Il-Sug Chung
W2A.17 Optical Fiber Communication Conference (OFC) 2015

Integration of photodetectors with lasers for optical interconnects using 200 mm waferscale III-V/SOI technology

Thijs Spuesens, Liu Liu, Diedrik Vermeulen, Jing Zhao, Pedro Rojo Romeo, Philippe Regreny, Laurent Grenouillet, Jean-Marc Fédeli, and Dries Van Thourhout
JThA027 National Fiber Optic Engineers Conference (NFOEC) 2011

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription