Abstract
The increasing interest in manipulating electromagnetic waves in the terahertz (THz) spectral range has motivated, in the last decade, a great research effort in the development of miniaturized technologies for THz emission and detection. Recently, field effect transistors (FETs), exploiting semiconductor nanowires (NWs) as active element, have been proven successful in highly-sensitive room-temperature detection of THz frequency beams. The FETs act as rectifiers converting the impinging THz radiation into a DC signal between source (S) and drain (D), proportional to the absorbed power and controlled by the gate (G) bias. The THz-detection with the NW either exploits the photo-excitation of plasma waves [1], or, thermoelectric phenomena [2].
© 2019 IEEE
PDF ArticleMore Like This
M. Ravaro, M. Locatelli, L. Viti, M. Pea, D. Ercolani, L. Consolino, S. Bartalini, A. Tredicucci, L. Sorba, M. S. Vitiello, and P. De Natale
CC_2_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013
Denis V. Seletskiy, Michael P. Hasselbeck, Chia-Yeh Li, Jeffrey G. Cederberg, Aaron Katzenmeyer, Maria E. Toimil-Molares, Francois Léonard, A. Alec Talin, and Mansoor Sheik-Bahae
NMC2 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2011
Max Eisele, Andreas Huber, and Tobias Gokus
SW3D.2 CLEO: Science and Innovations (CLEO:S&I) 2018