We demonstrate the first microresonator frequency combs in GaP, a III-V semiconductor transparent above 549 nm. High Kerr nonlinearity (> 10 −18m2/W) yields a 10-mW parametric threshold and 100-nm-wide combs with THz spacing, centered at 1550 nm.
© 2018 The Author(s)
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription