Abstract

The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.

© 2017 Optical Society of America

PDF Article
More Like This
Direct Growth of High-Power InGaN/GaN Quantum-Disks-in-Nanowires Red Light-Emitting Diodes on Polycrystalline Molybdenum Substrates

Chao Zhao, Tien Khee Ng, Nini Wei, Aditya Prabaswara, Mohd S. Alias, Bilal Janjua, Chao Shen, Giuseppe Bernardo Consiglio, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi
STu3R.8 CLEO: Science and Innovations (CLEO_SI) 2016

High-performance InGaN/GaN Quantum-Disks-in-Nanowires Light-emitters for Monolithic Metal-Optoelectronics

Chao Zhao, Tien Khee Ng, Nini Wei, Bilal Janjua, Rami T. ElAfandy, Aditya Prabaswara, Chao Shen, Giuseppe Bernardo Consiglio, Abdulrahman Albadri, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi
AS1F.6 Asia Communications and Photonics Conference (ACPC) 2016

A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate

Cong Wang, Bing Wang, Kenneth Eng Kian Lee, Soon Fatt Yoon, and Jurgen Michel
AS3A.3 Asia Communications and Photonics Conference (ACPC) 2015

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription