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Demonstration of a Relaxed Waveguide Semipolar (20 2 ¯ 1) InGaN/GaN Laser Diode

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Abstract

Growth on relaxed buffers provides a potential route to reduce difficulties caused by high strain (~ 3%) in the In0.3Ga0.7N active regions of green laser diodes (LDs). We demonstrate a blue LD with partially relaxed n- and p-side waveguide/cladding interfaces.

© 2012 Optical Society of America

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