Abstract

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging [1]. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales (τc < 1ps) usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy such as LT-GaAs (EgGaAs1.42eV) are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. We demonstrate here the implementation of low bandgap energy InAs (EgInAs0.98eV) quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism [2] in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.

© 2013 IEEE

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