The interest in quantum-confined optoelectronic devices has increased significantly in recent years. Specifically, saturable absorbers based on quantum-dot (QD) structures have been used in monolithic mode-locked semiconductor lasers (MMSL) for ultrashort pulse generation and these represent potential sources for data communications. To date, pulse widths of 400fs at 21 GHz from monolithic two-section devices have been reported1, with the shortest pulses achieved at an elevated reverse bias of up to 10V. The switching times of electroabsorption devices are ultimately governed by the sweep-out time of photogenerated carriers.

© 2007 IEEE

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