Reliable operation of UV AlGaN-based nanowires-LED at high injection current was realized by incorporating a Ti-pre-orienting/TaN-diffusion-barrier bilayer, thus enhancing external quantum efficiency, and resolving the existing device degradation issue in group-III-nanowires-on-silicon devices.

© 2018 The Author(s)

PDF Article
More Like This
Evolution of Junction Temperature and Heating Effects in UV AlGaN Nanowires LEDs

Davide Priante, Rami T. Elafandy, Aditya Prabaswara, Bilal Janjua, Chao Zhao, Malleswararao Tangi, Mohd Sharizal Alias, Yazeed Alaskar, Abdulrahman M. Albadri, Ahmed Y. Alyamani, Tien Khee Ng, and Boon S. Ooi
W2J.5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEOPR) 2018

Analysis on the Efficiency Droop of Deep-ultraviolet Emitting AlGaN Nanowires

J. Lu, Y. Zhong, and S. Zhao
PvM2G.2 Optical Devices and Materials for Solar Energy and Solid-state Lighting (PVLED) 2020

Advances of AlGaN-based High-Efficiency Deep-UV LEDs

Hideki Hirayama
79870G Asia Communications and Photonics Conference and Exhibition (ACP) 2010


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Poster Presentation

Media 1: PDF (1536 KB)