Abstract

In silicon (SOI) waveguides, two-photon absorption (TPA) and free-carrier absorption (FCA) in the 1550-nm wavelength range are responsible for an intensity-dependent extra-loss and refractive index change. Recombination of the free carriers generated by TPA produces a local heating of the waveguide [1] depending on the local optical power which causes an increase of the refractive index and alters the behaviour of multistage circuits because the power level can change locally, especially inside optical resonators where the intra-cavity power is enhanced according to the cavity finesse.

© 2011 Optical Society of America

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