We measure the wavelength dependence of the nonlinear index n2 and two-photon absorption coefficients of bulk silicon below the band edge. In contrast to direct-bandgap semiconductors, silicon shows a positive n2 throughout the band gap.
© 2007 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription