At present, the main focus of III-V nitride research is the realization of a current-injected laser diode, which is expected to be the shortest-wavelength semiconductor laser diode ever demonstrated. However, stimulated emission has been observed only by optical pumping, and not by current injection. In this paper, we present the laser diodes (LDs) fabricated using wide-band-gap III-V nitride materials. III-V nitride films were grown by the two-flow metallorganic chemical vapor deposition method.

© 1996 Optical Society of America

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