Abstract

At present, the main focus of III-V nitride research is the realization of a current-injected laser diode, which is expected to be the shortest-wavelength semiconductor laser diode ever demonstrated. However, stimulated emission has been observed only by optical pumping, and not by current injection. In this paper, we present the laser diodes (LDs) fabricated using wide-band-gap III-V nitride materials. III-V nitride films were grown by the two-flow metallorganic chemical vapor deposition method.

© 1996 Optical Society of America

PDF Article
More Like This
Carrier-population dynamics in group III-nitride quantum well laser structures

W. W. Chow, K. C. Zeng, R. Mair, J. Y. Lin, and H. X. Jiang
CWJ2 Conference on Lasers and Electro-Optics (CLEO) 1998

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes

Shuji Nakamura
CThB2 Conference on Lasers and Electro-Optics (CLEO) 1997

Microscopic theory of gain in a group-III nitride strained quantum well laser

W. W. Chow, A. F. Wright, J. S. Nelson, S. Hughes, A. Knorr, and S. W. Koch
CThP3 Conference on Lasers and Electro-Optics (CLEO) 1996