Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Red Laser Diode

A. A. Al-Jabr; M. A. Majid; M. S. Alias; T. K. Ng; B. S. Ooi

doi:10.1364/ASSL.2015.AM5A.46

Advanced Solid State Lasers
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper AM5A.46
•https://doi.org/10.1364/ASSL.2015.AM5A.46

Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Red Laser Diode

A. A. Al-Jabr, M. A. Majid, M. S. Alias, T. K. Ng, and B. S. Ooi

Advanced Solid State Lasers 2015

Berlin Germany
4–9 October 2015
ISBN: 978-1-943580-02-6

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A. A. Al-Jabr, M. A. Majid, M. S. Alias, T. K. Ng, and B. S. Ooi, "Achieving Room Temperature Orange Lasing Using InGaP/InAlGaP Red Laser Diode," in Advanced Solid State Lasers, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper AM5A.46.

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Abstract

We demonstrated the first orange laser diode at room temperature with a decent total output power of ~46mW and lasing wavelength of 608nm, using a novel strain-induced quantum well intermixing in InGaP/InAlGaP red laser structure.

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