Abstract

The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) emitting at ${\sim}{275}\;{\rm nm}$ was carried out, with an emphasis on fabricated devices having a diameter of 300, 200, 100, 50, and 20 µm, respectively. It was revealed that the LED chips with smaller mesa areas deliver considerably higher light output power density; meanwhile, they can sustain a higher current density, which is mainly attributed to the enhanced current spreading uniformity in micro-scale chips. Importantly, when the diameter of LED chips decreases from 300 µm to 20 µm, the peak external quantum efficiency (EQE) increases by 20%, and the EQE peak current density can be boosted from ${8.85}\;{{\rm A/cm}^2}$ and ${99.52}\;{{\rm A/cm}^2}$. Moreover, we observed a longer wavelength emission with enlarged full-width at half-maximum (FWHM) in the LEDs with smaller chip sizes because of the self-heating effect at high current injection. These experimental observations provide insights into the design and fabrication of high-efficiency micro-LEDs emitting in the DUV regime with different device geometries for various future applications.

© 2021 Optical Society of America

Enhanced performance of 275-nm AlGaN-based deep-ultraviolet LEDs via internal-roughed sapphire and SiO₂-antireflection film

Yinzuo Qian, Zhefu Liao, Zhenxing Lv, Shengli Qi, and Shengjun Zhou
Opt. Lett. 48(4) 1072-1075 (2023)

Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall

Meng Tian, Huabin Yu, Muhammad Hunain Memon, Zhanyong Xing, Chen Huang, Hongfeng Jia, Haochen Zhang, Danhao Wang, Shi Fang, and Haiding Sun
Opt. Lett. 46(19) 4809-4812 (2021)

Ring geometric effect on the performance of AlGaN-based deep-ultraviolet light-emitting diodes

Jie Zhao, Qixin Li, Qilong Tan, Tianhong Liang, Wen Zhou, Ningyang Liu, and Zhitao Chen
Opt. Express 32(2) 1275-1285 (2024)

Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications

Siyao Zhang, Rui He, Yiwei Duo, Renfeng Chen, Ligang Wang, Junxi Wang, and Tongbo Wei
Opt. Lett. 48(15) 3841-3844 (2023)

Full wafer scale electroluminescence properties of AlGaN-based deep ultraviolet LEDs with different well widths

Yi Zhang, Shuang Zhang, Linlin Xu, Huixue Zhang, Ange Wang, Maocheng Shan, Zhihua Zheng, Hao Wang, Feng Wu, Jiangnan Dai, and Changqing Chen
Opt. Lett. 46(9) 2111-2114 (2021)