Abstract
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large bandgap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second- and third-order pair generation that could improve upon state-of-the-art quantum optical sources and make novel regimes of strong parametric photon–photon nonlinearities accessible.
© 2020 Optical Society of America
Full Article | PDF ArticleMore Like This
Bart Kuyken, Maximilien Billet, Francois Leo, Kresten Yvind, and Minhao Pu
Opt. Lett. 45(3) 603-606 (2020)
I. Roland, A. Borne, M. Ravaro, R. De Oliveira, S. Suffit, P. Filloux, A. Lemaître, I. Favero, and G. Leo
Opt. Lett. 45(10) 2878-2881 (2020)
Hatam Mahmudlu, Stuart May, Alí Angulo, Marc Sorel, and Michael Kues
Opt. Lett. 46(5) 1061-1064 (2021)