Abstract
In this work heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated -ZnO films on InN/GaN/Si wafers were converted to -type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our -type ZnO film has a high carrier concentration of , a high mobility of , and a low resistivity of 0.079 Ωcm. As a result, the proposed heterojunction diode displays a well-behaving current rectification of a typical junction, and the measured current versus voltage (I–V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.
© 2014 Optical Society of America
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