Abstract
In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of
${\text{2.03}}\times {\text{10}}^{-3}\;{\text{mA/cm}}^{2}$
was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 μm at 77 K, and the corresponding detectivity was
${\text{5.78}}\times {\text{10}}^{8}\,{{\text{cm}\cdot \text{Hz}}}^{1/2}{\text{/W}}$
. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.
© 2018 IEEE
PDF Article
More Like This
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates
Yating Wan, Zeyu Zhang, Ruilin Chao, Justin Norman, Daehwan Jung, Chen Shang, Qiang Li, MJ Kennedy, Di Liang, Chong Zhang, Jin-Wei Shi, Arthur C. Gossard, Kei May Lau, and John E. Bowers
Opt. Express 25(22) 27715-27723 (2017)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy