Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Nearly 70 Gbit/s NRZ-OOK encoding of a dual-mode 850 nm VCSEL with a highly In-doped and small Zn-diffused emission area

Open Access Open Access

Abstract

By pre-emphasized encoding of a dual-mode 850 nm vertical-cavity surface-emitting laser (VCSEL), the nearly 70 Gbit/s on–off keying (OOK) transmission performance is performed for the ultrafast data link. This VCSEL is designed with a new structural configuration, including 6 μm oxidized aperture and 4 μm Zn-diffused emission aperture, which exhibits dual-mode lasing with a threshold current of 0.75 mA, a nonsaturated power of 2.2 mW at 8 mA, and a differential quantum efficiency of 0.38 under a lensed OM4 multimode fiber (MMF) coupling scheme. In particular, the high indium (In) dopant density in the quantum well increases its differential gain coefficient to upshift the relaxation oscillation frequency, which effectively broadens the modulation bandwidth to high-speed data transmission. For the back-to-back transmission, the VCSEL coupled with a lensed OM4-MMF (1 m) for short-reach link reveals an NRZ-OOK transmission at 66 and 69 Gbit/s with a corresponding bit-error ratio (BER) of 5.9×1010 and 105 for error-free decoding after forward-error correction. When employing graded-index single-mode fiber (GI-SMF) with 100 m length as the transmission segment, the VCSEL linked to the GI-SMF connected with a lensed OM4-MMF (1 m) collimator can provide the pre-emphasized NRZ-OOK transmission at 51 Gbit/s with a BER of 4.5×1010 and SNR of 14.1 dB.

© 2022 Chinese Laser Press

1. INTRODUCTION

In recent years, high-speed data transmission for the demand of high-resolution images/audio, data streaming, and data cloud storage/computing has become an important issue. Transmission speed ranging from 100 to 400 Gbit/s for ethernet has been standardized by IEEE P802.3bs [1]. The required transmission capacity has been increased to the exabyte level, which has also contributed to the rapid pace of Tbit/s data-center technology development.

Artificial intelligence integrated with machine and deep learning technologies will need big-data processing in the future by increasing the amount of data exchanged from devices and networks in data centers [2]. As a result, the servers for data transmission between data centers have become crucial pieces of technology. At the transmitted end, the vertical-cavity surface-emitting laser (VCSEL) has been developed to enhance transmission capacity due to its low threshold bias, high coupling efficiency, wide modulation bandwidth, and cost-effective modulization [38]. However, the multimode (MM) VCSEL exhibits a low modulation bandwidth to effectively decrease the entire transmission capacity. In addition, large modal dispersion is induced during transmission to decrease the data rate when an MM VCSEL is used as a transmitter. Although the single-mode (SM) VCSEL has the most broadened modulation bandwidth for obtaining the highest data rate compared with other VCSELs, its emission power when coupled using a fiber is so low that it cannot support long-reach transmission owing to propagation loss during transmission. Based on these trade-offs, the few-mode (FM) VCSEL has become a suitable solution to enhance transmission capacity and distance.

To further improve the transmission capacity in future data centers, the novel fabrication to extend the modulation bandwidth of VCSELs [9,10] and a new data format to increase the spectral efficiency of the transmission system [11,12] have been utilized. Many studies have reported VCSEL-multimode fiber (MMF) transmission with a data rate beyond 50 Gbit/s. For the nonreturn-to-zero on–off keying (NRZ-OOK) data format, Wu et al. successfully demonstrated 50 Gbit/s transmission by using a 25 GHz double-oxide-confined VCSEL to achieve the error-free criterion [13]. In addition, Kuchta et al. used an 850 nm VCSEL to perform NRZ-OOK transmission at 71 Gbit/s [14]. However, most VCSEL-based optical links still utilize MMF as the propagation media. In recent years, graded-index or normal single-mode fibers (SMFs) have been employed to reduce modal dispersion during transmission. Therefore, data rates and transmission distances have been increased. Li et al. employed a graded-index SMF (GI-SMF) to reach 25 Gbit/s NRZ-OOK data carried by an 850 nm VCSEL over 1.5 km transmission [15]. However, the transmission performance of NRZ-OOK data carried by a dual-mode VCSEL between the MMF and SMF links has yet to be compared.

In this work, NRZ-OOK transmission by a dual-mode VCSEL over a 100 m GI-SMF is demonstrated for short-reach data-center applications. A dual-mode VCSEL with higher indium (In) dopant density in the active quantum well region increases the differential gain coefficient to extend the relaxation frequency. In addition, the dopant density improves the modulation bandwidth for obtaining a larger data capacity. The transmission performance of NRZ-OOK data via the dual-mode VCSEL over 100 m OM4 MMF and 100 m GI-SMF is also compared.

2. DESIGN AND FABRICATION OF THE VCSEL DEVICE

In this work, the optical bandwidth and gain of the VCSEL are simulated using Crosslight PICS3D software [16]. Crosslight PICS3D software uses the nonlinear Newton method to solve the current continuity and Schrodinger, Poisson, and other equations to design a VCSEL epitaxial structure with the appropriate material, thickness, and doping. In addition, the Fermi-golden rule and Green function are utilized to simulate the gain of the active region in the VCSEL. The widening of the gain spectrum caused by carrier–carrier and carrier–photon scattering is also considered. In addition, the VCSEL modulation bandwidth can be simulated via commercial software [16] based on the formulas shown in Appendix A. The detailed parameters of the VCSEL structure are listed in Appendix B. Therefore, the simulated optical bandwidth of the VCSEL can be obtained from the frequency modulation response. Figure 1(a) shows the heavy hole and light hole conduction bands of gallium arsenide (GaAs) at different In compositions. Figures 1(b) and 1(c) exhibit the simulated optical bandwidths and D-factors of In0.08Ga0.92As and In0.12Ga0.88As VCSEL devices, respectively. An appropriate amount of strain can reduce the mutual influence between sub-bands and split the heavy and light hole conduction bands. In addition, the energy level of the limited hole conduction band can also be reduced. The holes are more evenly distributed in the sub-bands of the valence band, resulting in a lower transparent carrier density. Therefore, a larger gain can be generated. The threshold current is also decreased by properly detuning the strain to improve the performance of the VCSEL. Figures 1(d) and 1(e) show the simulated gain spectra of In0.08Ga0.92As and In0.12Ga0.88As quantum well (QW) VCSELs, respectively. The differential gain of the In0.12Ga0.88As QW VCSEL increases from 1664cm1 to 2000cm1 compared with that of the In0.08Ga0.88As QW VCSEL. This 20% enhancement of differential gain can improve the high-speed characteristics of the VCSEL device.

 figure: Fig. 1.

Fig. 1. (a) Heavy hole and light hole conduction band at different indium compositions. Optical bandwidths of (b) In0.08Ga0.92As and (c) In0.12Ga0.88As QW VCSELs. D-factors of (d) In0.08Ga0.92As and (e) In0.12Ga0.88As QW VCSELs. Simulated gain spectra of (f) In0.08Ga0.92As and (g) In0.12Ga0.88As QW VCSELs.

Download Full Size | PDF

The structural epitaxy, patterning fabrication, and the top and cross-sectional view images of the designed dual-mode VCSEL are shown in Fig. 2. Figure 2(a) shows a cross-sectional view of the dual-mode VCSEL structure; Fig. 2(b) exhibits a top-view SEM image of the dual-mode VCSEL device. Figure 2(c) shows a cross-sectional SEM image of the Zn-diffusion region in the VCSEL device. The epitaxial VCSEL wafer in this study was fabricated by the following processes. A semi-insulating GaAs substrate is grown using a metal–organic chemical vapor deposition system. The short resonant cavity (λ/2) reduces the transient time of its internal carriers and increases its confinement factor. Multiple pairs of oxide layers on the two primary oxide apertures formed by selective wet oxidation reduce the parasitic capacitance. The active region consists of three 6.5 nm In0.08Ga0.92As QW layers separated by 8 nm Al0.37Ga0.63As barriers. After In doping, the stress formation and the increased differential gain achieve high bandwidth characteristics.

 figure: Fig. 2.

Fig. 2. (a) Schematic illustration of the fabricated dual-mode VCSEL structure. (b) Top-view SEM image of the fabricated VCSEL. (c) Cross-sectional SEM image of the Zn-diffusion region in the device.

Download Full Size | PDF

Considering the impact of the parasitic effects, benzocyclobutene (BCB) with a low dielectric constant under a radio frequency (RF) electrode is used to reduce electrode capacitance. In addition, the doping concentrations of 33-pair n-type and 20-pair p-type distributed Bragg reflectors are also improved to reduce parasitic resistance. A graded distribution form is designed to reduce the energy band difference of the heterogeneous junction. For the Zn-diffusion process, SiO2 is utilized as a hard mask to achieve mode suppression. The diffusion depth and aperture are about 1 and 4 μm, respectively.

3. EXPERIMENTAL SETUP

The experimental setup for performing NRZ-OOK transmission carried by the dual-mode VCSEL over 100 m SMF and 100 m OM4 MMF links is shown in Fig. 3(a). NRZ-OOK data with a pseudorandom binary stream (PRBS) length of 2171 was generated by an arbitrary waveform generator (AWG, Keysight M8194A) with an analog bandwidth of 45 GHz and a sampling rate of 120 GSa/s. The electrical NRZ-OOK data generated from the AWG was amplified via a microwave amplifier (Anritsu, AH54147A) with an analog bandwidth of 50 GHz and a gain of 20 dB. Then, the NRZ-OOK data stream and a direct current (DC) bias current were combined using a bias-tee (Anritsu, V250) with an analog bandwidth of 65 GHz. The size of the dual-mode VCSEL is 300μm×225μm, as shown in Fig. 3(b). The combined signal was injected into the dual-mode VCSEL by a 40 GHz ground-signal (GS) microwave probe (GGB 40A-GS-125-DP) with a pitch interval of 125 μm. Figure 3(c) shows the GS probe touching the dual-mode VCSEL device to deliver the bias current and NRZ-OOK data. The dual-mode VCSEL emits light as the electrical signal is injected into the device via the GS probe, as shown in Fig. 3(d). The VCSEL output was collected by a lensed OM4-MMF with a core diameter of 50 μm, as shown in Fig. 3(e). In this work, the lensed MMF segment is customized by using the Corning OM4-MMF with its core/cladding size of 50/125 μm, spot size of 20 μm, and radius of curvature of 45 μm. The GI-SMF is SMF-28(R) Ultra fiber made by Corning Incorporated. A 100 m GI-SMF or 100 m OM4 MMF was used to create the short-reached transmission. After 100 m SMF or 100 OM4 MMF transmission, the optical NRZ-OOK data transmitted by the dual-mode VCSEL was received by a photoreceiver (Newport, 1484-A-50) with an analog bandwidth of 22 GHz to perform the optical-to-analog conversion. Finally, the converted data was analyzed via a digital serial analyzer (DSA, Tektronix 8300), wherein the Q-factor was directly measured and analyzed by built-in software.

 figure: Fig. 3.

Fig. 3. (a) Experimental setup for NRZ-OOK transmission carried by the fabricated dual-mode VCSEL in BtB and 100 m GI-SMF links. (b) Top-view microscopic photograph of the VCSEL chip. (c) Top-view microscopic photograph of the GS microwave probe touching the VCSEL chip. (d) Top-view microscopic photograph of the VCSEL chip light-emission. (e) Top-view microscopic photograph of the lensed fiber probe collecting the light-emission of the VCSEL chip.

Download Full Size | PDF

In this work, the bit-error ratio (BER) of the NRZ-OOK data is measured using commercial software (Tektronix, 80JARB and 80SJNB) [17]. According to this software, the average BER is obtained from the BERs of the horizontal and vertical bathtub curves. The measured signal-to-noise ratio (SNR) is given by the commercial analyzer software (DSA8300 with option 80SJNB), which follows the definition by the ratio of the signal difference between the 1- and 0-levels relative to the noise at both levels obtained by [18,19],

SNR=M1-levelM0-levelσ1-level+σ0-level,
where M1level and M0level denote the means of the histogram at the 1-level and 0-level, respectively. In addition, the σ1level and σ0level in Eq. (1) indicate the standard deviation of the histogram at the 1-level and 0-level, respectively. To further improve the SNR and BER performance of the received data, the pre-emphasis process was used to compensate for the transmission signal. The pre-emphasis process is performed by the AWG with a built-in functionality that uses the inverse correction transfer function of the transmission system to compensate for the transmitted signals [20].

In detail, two transmission routes are defined at the beginning, as shown in Fig. 4. The first route (Htotal with VCSEL and channel responses) contains all elements added into the measured transmission channel between the AWG and the DSA, whereas the second route (Hchannel with channel response only) contains only the microwave elements between the AWG and DSA. Then, two transfer functions in the frequency region for the two transmission circuits are defined as

{Hchannel(f)=Vchannel(f)VAWG(f)Htotal(f)=VVCSEL(f)VAWG(f)·Vchannel(f)VAWG(f)=HVCSEL(f)·Hchannel(f),
where Hchannel(f) and Htotal(f) denote the transfer functions of the channels without and with the VCSEL, respectively. In Eq. (2), VAWG(f), Vchannel(f), and VVCSEL(f) indicate the original output amplitude functions contributed by the AWG, the channel, and the VCSEL, respectively. Therefore, the transfer and output amplitude functions of the VCSEL (HVCSEL and VVCSEL) can be derived as
{HVCSEL(f)=Htotal(f)Hchannel(f)VVCSEL(f)=VAWG(f)·HVCSEL(f)=VAWG(f)·Htotal(f)Hchannel(f).
 figure: Fig. 4.

Fig. 4. Schematic diagrams of the measured and simulated system in the pre-emphasis process.

Download Full Size | PDF

To compensate the channel response at the very beginning by delivering a pre-emphasized amplitude function of Vpreemphasis(f) from the AWG for convenience, the pre-emphasized transfer function of Hpreemphasis(f) must be extracted from the measured Hchannel(f) and Htotal(f) functions. Vpreemphasis(f) is written as

{Vpreemphasis(f)=VAWG(f)·Hpreemphasis(f)VVCSEL(f)=Vpreemphasis(f)·Htotal(f)=[VAWG(f)·Hpreemphasis(f)]·Htotal(f)=[VAWG(f)·Hchannel1(f)]·Htotal(f).

During the experiments, the pre-emphasized AWG output function in the frequency domain is generated by multiplying the original AWG output amplitude function with the Hpreemphasis(f) function, which is the reciprocal channel response function obtained by performing the fast Fourier transform:

Hpreemphasis(f)={FFT[hchannel(t)]}1,Vpreemphasis(f)=VAWG(f)/FFT[hchannel(t)],
where hchannel(t) denotes the measured transfer function of the channel response in the time domain. Afterward, pre-emphasis is done by applying the modified AWG output, Vpreemphasis(t), to complete the precompensated transmission.

4. RESULT AND DISCUSSION

A. Basic Characteristics of the Dual-Mode VCSEL

Figure 5(a) shows the power-to-current (PI) curve and dP/dI slope of the dual-mode VCSEL. This dual-mode VCSEL exhibits a threshold current of 0.72 mA and a maximal optical output power of 2.2 mW @ 8 mA before saturation via the lensed MMF. In addition, the corresponding dP/dI is 0.35 W/A above the lasing threshold. From Fig. 5(a), a small variation in dP/dI at the biased current, ranging between 1.44 and 5 mA, indicates the linear modulation response. Biasing the dual-mode VCSEL between 5 and 8 mA increases its power by 0.8 mW; however, the power saturation slightly decreases the dP/dI, sacrificing the modulation throughput. The distinct rollover of the PI curve occurs when biasing the dual-mode VCSEL beyond 8.5 mA. Here, the Auger effect increases the nonradiative scattering and reduces the quantum efficiency. From the voltage-to-current (VI) curve and the differential resistance (dV/dI) of the dual-mode VCSEL operated at 25°C, shown in Fig. 5(b), the differential resistances of 218Ω @ 5 mA and 115Ω @ 8 mA are obtained.

 figure: Fig. 5.

Fig. 5. (a) PI and dP/dI responses. (b) VI and dV/dI responses of the dual-mode VCSEL.

Download Full Size | PDF

These differential resistances cause modulated signal reflection and reduce the throughput efficiency. As the characteristic impedance is typically set to 50Ω, large differential resistance causes the high impedance mismatch to enlarge the reflection coefficient, which results in a huge signal reflection induced between the dual-mode VCSEL and the data-stream generator. The reflection coefficient (Γ) is defined as (ZVCSELZRF)/(ZVCSEL+ZRF), where ZVCSEL and ZRF represent the impedance of the VCSEL and the characteristic impedance, respectively. As an example, a reflection coefficient of 0.39 for the dual-mode VCSEL operating at 8 mA is better than that of 0.63 operating at 5 mA. In principle, the return loss (RL) and voltage standing wave ratio (VSWR) are defined as 20log|Γ| and (1+Γ)/(1Γ), respectively. After calculating these values, the dual-mode VCSEL operated at 8 mA exhibits an RL of 8.1 dB and VSWR of 2.27. The smaller reflection coefficient promotes better modulation efficiency, which improves the SNR and effectively reduces the microwave power consumption of the encoding data stream caused by the impedance mismatch.

To connect the dual-mode VCSEL chip with the fiber link for analysis, two kinds of optical fiber coupling schemes were employed. The first optical coupling scheme uses only the lensed OM4-MMF (with the 100-m OM4-MMF for transmission), whereas the second scheme combines the lensed OM4-MMF (with the 100 m GI-SMF for transmission). Figures 6(a) and 6(b) show the coupled optical powers and spectra of the dual-mode VCSEL received by the lensed OM4-MMF in the BtB and 100 m GI-SMF conditions, respectively. Compared with the first scheme shown in the upper inset of Fig. 6(a), with only the lensed OM4 MMF link, the second scheme in Fig. 6(b), with the lensed OM4 MMF + 100 m GI-SMF link, changes not only the coupling efficiency but also the coupled-mode number. From the coupled optical powers and spectra obtained from the two schemes shown in Fig. 6, the whole dual-mode VCSEL lasing spectrum is coupled out, with a coupled power as high as 2.2 mW obtained at the lensed MMF end-face for transmission. As observed before transmission, the dual-mode VCSEL emits two main peaks at 851.8 and 853.4 nm with respective powers of 2.7 and 7.8dBm. The spectrum of the VCSEL coupled to the MMF has a total output power estimated to be 1.5dBm. The spectrum of the VCSEL coupled to the GI-SMF has a total output power of 6.9dBm and two main modes at 8.2 and 12.6dBm. The power difference of 5.4 dB between the MMF-to-MMF and MMF-to-SMF schemes correlates to a coupling loss of 6 dB. Moreover, the optical spectrum of the dual-mode VCSEL exhibits only two principal modes at 851.8 and 853.4 nm.

 figure: Fig. 6.

Fig. 6. Coupling powers and optical spectra of the dual-mode VCSEL received by the lensed OM4-MMF in (a) BtB and (b) 100 m GI-SMF conditions.

Download Full Size | PDF

As the lensed OM4 MMF connects with the 100 m SMF, the coupling power of the dual-mode VCSEL significantly decreases to 0.6 mW with a coupling efficiency of 0.26. That is due to the core diameter mismatch between the lensed OM4-MMF (Dcore=50μm) and the SMF (Dcore=9μm). Figure 7 shows the optical spectra of the VCSEL operated under different bias currents at the lensed MMF and lensed MMF + GI-SMF outputs. After MMF + GI-SMF coupling, the fundamental mode of the VCSEL survives, whereas the high-order-mode peaks of the VCSEL diminish after passing through the 100 m GI-SMF. Indeed, we cannot exclude the situation that the side modes with attenuated peak power merge into the noise background of the optical spectral analyzer.

 figure: Fig. 7.

Fig. 7. Optical spectra of the VCSEL operated under different bias currents at lensed MMF (top) and lensed MMF + GI-SMF (bottom) outputs.

Download Full Size | PDF

The frequency responses of the dual-mode VCSEL operated under different bias currents are shown in Fig. 8. For the frequency response measurement, the peak-to-peak amplitude of the RF signal is set to 2.2 V. When setting the DC bias current to 8 mA, the obtained DC voltage is 4.2 V. The original response of optical receiver is specified in a datasheet without executing any advanced signal pre-emphasis for compensating the channel response. By employing a discrete channel bandwidth pre-emphasis algorithm, the overall response of the whole transmission system, including the dual-mode VCSEL, the transmission channel, and the optical receiver, is measured for feedbacking amplitude and phase pre-compensation node to the generator node by node. Afterward, all the responses of microwave and optical components except for the dual-mode VCSEL are calibrated for obtaining the net response of the dual-mode VCSEL. According to the response of the dual-mode VCSEL, the modulation bandwidth of the dual-mode VCSEL is obtained eventually. When the bias current increases from 2 to 5 mA, the 3 dB bandwidth of the dual-mode VCSEL extends from 13.7 to 25.1 GHz. The corresponding relaxation oscillation peak also extends from 8.6 to 18.5 GHz. By further increasing the bias current to 8 mA, the 3 dB bandwidth of the dual-mode VCSEL is enhanced to 28 GHz. In addition, the relaxation oscillation peak gradually disappears. However, the 3 dB bandwidth slightly suppresses to 27.5 GHz when the dual-mode VCSEL is operated at 9 mA. This degradation of the 3 dB modulation bandwidth of the dual-mode VCSEL is mainly attributed to declined frequency response with increasing DC bias current. Zn diffusion can significantly reduce the resistance of the top DBR layer to decrease the RC time constant. This decreased RC time constant extends the 3 dB modulation of the dual-mode VCSEL.

 figure: Fig. 8.

Fig. 8. Frequency response of the dual-mode VCSEL under different biasing currents.

Download Full Size | PDF

B. NRZ-OOK Transmission Carried by the Dual-Mode VCSEL

Figure 9 shows the eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL with and without the pre-emphasis process for the BtB case. Without executing the pre-emphasis process, the eye diagrams of the NRZ-OOK transmission at 50, 53, and 56 Gbit/s become blurred, with degraded SNR owing to the distortion caused by the finite transmission channel response. From the eye diagrams, the SNR of the NRZ-OOK transmission is measured between 5.7 and 5.8 dB as the data rate changes from 50 Gbit/s to 56 Gbit/s. This is because the bandwidth limitation of the dual-mode VCSEL hardly supports NRZ-OOK transmission with a data rate beyond 50 Gbit/s. Therefore, the corresponding BER is also degraded from 2.6×102 to 2.7×102, which fails the telecom standard (BER of 109) as the data rate increases to 56 Gbit/s. However, the pre-emphasis process compensates for the frequency response of the overall system to significantly improve the data rate during transmission. After the pre-emphasis process, the SNR of NRZ-OOK transmission at 50 Gbit/s is 18 dB with a corresponding BER of 9.8×1016, which passes the datacom standard (BER of 1012). When the data rate increases to 56 Gbit/s, the SNR of NRZ-OOK transmission is slightly degraded to 17 dB. The corresponding BERs of NRZ-OOK transmission at 53 and 56 Gbit/s are 8.3×1015 and 1.2×1013, respectively, which still pass the telecom standard. The pre-emphasis process is further utilized to test the transmission limitation of NRZ-OOK transmission carried by the dual-mode VCSEL.

 figure: Fig. 9.

Fig. 9. Eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL in the BtB case with and without the pre-emphasis process under data rates of 50, 53, and 56 Gbit/s.

Download Full Size | PDF

Figure 10(a) shows eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL at data rates ranging from 61 to 69 Gbit/s. When the data rate increases from 61 to 69 Gbit/s, the eye diagrams become blurred due to the bandwidth limitation of the dual-mode VCSEL. Moreover, the bandwidth limitation also contributes to the increased rise/fall times from 6.9 to 10.1 ps. In Fig. 10(a), the peak-to-peak jitter broadens from 1.28 to 1.76 ps when the data rate enlarges from 61 to 69 Gbit/s. The eye width of the NRZ-OOK data is suppressed from 7.53 to 5.9 ps as the data rate increases to 69 Gbit/s. In addition, the amplitude of the NRZ-OOK data is decreased from 168 to 135 mV when the data rate increases from 61 to 69 Gbit/s. This is because the pre-emphasis process sacrifices more power at the low-frequency region to compensate for that at the high-frequency region under higher data-rate operation. In addition, the Q-factor of the NRZ-OOK transmission is also degraded from 4.5 to 3.0 dB when the data rate increases from 61 to 69 Gbit/s. Figure 10(b) summarizes the received SNR and decoded BER performance of NRZ-OOK transmission carried by the dual-mode VCSEL at data rates between 61 and 69 Gbit/s. Because of the bandwidth limitation of the dual-mode VCSEL, the SNR of the NRZ-OOK data is degraded from 16.5 to 12.1 dB with a decaying rate of 0.55dB/GHz as the data rate increases from 61 to 69 Gbit/s. In addition, the obtained BER enlarges above 1012 to fail the error-free condition for the datacom standard when the data rate increases beyond 61 Gbit/s.

 figure: Fig. 10.

Fig. 10. (a) Eye diagrams and (b) BER and SNR of NRZ-OOK transmission carried by the dual-mode VCSEL in the BtB case with the pre-emphasis process under different data rates (between 61 and 69 Gbit/s).

Download Full Size | PDF

The dual-mode VCSEL successfully transmits NRZ-OOK data at 61 Gbit/s with a corresponding BER of 6.8×1012. Because the SNR of the NRZ-OOK data decreases and degrades the BER performance when increasing the data rate, the allowable data rate is enlarged to 63 Gbit/s with a BER of 9.9×1010, which passes the telecom standard with a BER of 109. As the data rate further increases to 69 Gbit/s, the BER of the NRZ-OOK data decays to 2.6×105. Therefore, this dual-mode VCSEL can transmit NRZ-OOK data with data rates of 56 Gbit/s for the datacom standard and 63 Gbit/s for the telecom standard in the BtB case. This transmission performance provides an opportunity for achieving the IEEE 802.3cm standard. After optimizing NRZ-OOK transmission in the BtB case, the NRZ-OOK transmission carried by the dual-mode VCSEL over the 100 m GI-SMF with pre-emphasis is also demonstrated. Figure 11 shows eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL in the BtB and 100 m GI-SMF links under different data rates for comparing transmission performance. As the data rate increases from 50 to 51 Gbit/s, the SNR of the NRZ-OOK data after 100 m GI-SMF transmission is decreased from 17.3 to 14.1 dB with a corresponding Q-factor reduction from 4.5 to 3.6. This phenomenon also contributes to the degraded BER from 9.1×1014 to 2.2×107. The penalty of the allowable data rate to pass the telecom standard results in 13 Gbit/s between the BtB and 100 m GI-SMF transmission conditions. Such a large penalty is mainly due to the coupling loss at the lensed OM4 MMF/GI-SMF interface and the propagation loss during transmission. Because of the bandwidth limitation for the dual-mode VCSEL, the SNR of the NRZ-OOK data is degraded from 16.5 to 12.1 dB with a corresponding decaying rate of approximately 0.55dB/GHz when the data rate increases from 61 to 69 Gbit/s.

 figure: Fig. 11.

Fig. 11. Eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL in BtB and 100 m GI-SMF cases under different data rates.

Download Full Size | PDF

For a parametric comparison, key parameters of the received eye diagram obtained from the NRZ-OOK data at different coupling fiber schemes are summarized in Table 1. Table 1 also exhibits the key parameters of the pre-emphasized NRZ-OOK data stream before and after 100 m GI-SMF transmission under the allowable data rate to pass the telecom standard. Under the criterion of the telecom standard, the allowable data rates of NRZ-OOK transmission carried by the dual-mode VCSEL are 63 Gbit/s in the BtB case and 50 Gbit/s over the 100 m GI-SMF link.

Tables Icon

Table 1. Key Parameters of Pre-emphasized NRZ-OOK Data Carried by the Dual-Mode VCSEL before and after 100 m GI-SMF Transmission

Figure 12 shows eye diagrams of NRZ-OOK data transmitted by the dual-mode VCSEL in the BtB, 100 m GI-SMF, and 100 m OM4 MMF cases. To achieve the demand for an intra-data-center application, the permissible data rate is reduced to 50 Gbit/s to perform the BtB, 100 m GI-SMF, and 100 m OM4 MMF transmission. BERs of the NRZ-OOK data are below the BER criterion of the telecom standard (109) in both 100 m GI-SMF and 100 m OM4 MMF cases. In the SMF case, the dual-mode VCSEL can deliver 50 Gbit/s NRZ-OOK data with a BER of 9.1×1014, an SNR of 17.3 dB, and a Q-factor of 4.5. For the 100 m OM4 MMF transmission, the BER, SNR, and Q-factor are degraded to 7.6×1010, 15.7 dB, and 4.1, respectively. Although the mismatch of the core diameter between the lensed MMF and the GI-SMF causes huge coupling loss, which affects the transmission performance, the transmission performance in the 100 m GI-SMF case is better than that in the 100 m OM4 MMF case. This is because the larger modal dispersion in the OM4 MMF also induces more serious deterioration during transmission, even though the coupling loss is as small as 9% between the lensed MMF and the OM4 MMF. The related transmission parameters of NRZ-OOK data carried by the dual-mode VCSEL in the BtB, 100 m GI-SMF, and 100 m OM4 MMF cases are summarized in Table 2. Apparently, the modal dispersion induced by the OM4-MMF degrades the transmitted data waveform. This phenomenon also causes an enlarged timing jitter and large rise/fall times. Eventually, the received SNR for the 100 m OM4 MMF case is decreased to cause BER degradation by more than four orders of magnitude compared with the transmission performance in the 100 m GI-SMF case. From the above-mentioned discussion, the transmission performance of short-reach data-center transmission is mainly attributed to the modal dispersion.

 figure: Fig. 12.

Fig. 12. Eye diagrams of 50 Gbit/s NRZ-OOK data carried by dual-mode VCSEL in BtB, 100 m OM4 MMF, and 100 m GI-SMF cases.

Download Full Size | PDF

Tables Icon

Table 2. Key Parameters of NRZ-OOK Data Stream Carried by the Dual-Mode VCSEL before and after the SMF Link with the Pre-emphasis Process

In summary, Fig. 13 and Table 3 reveal the developing benchmarks for the data rate of NRZ-OOK transmission versus the oxide aperture and modulation bandwidth of the VCSEL. As early as 2011, IBM used a SiGe-based laser driver IC to drive a VCSEL to perform 20 Gbit/s NRZ-OOK transmission over 200 m [21]. In 2012, Johnson et al. directly modulated a VCSEL to demonstrate 30 Gbit/s NRZ-OOK transmission under the datacom standard [22]. Moreover, Westbergh et al. developed a high-speed VCSEL with the highest modulation bandwidth of 30 GHz for delivering NRZ-OOK data with the highest data rate of 57 Gbit/s [2327]. At the same time, Muting et al. demonstrated NRZ-OOK transmission with the highest data rate of 40 Gbit/s using a VCSEL with a modulation bandwidth of 21 GHz [28,29]. Feng et al. also utilized a VCSEL with a modulation bandwidth of 29.2 GHz to achieve a data rate of 57 Gbit/s for NRZ-OOK transmission [30,31]. In addition, Shi and coworkers further developed a single-mode VCSEL with 29 GHz bandwidth to perform NRZ-OOK transmission at 54 Gbit/s [3234]. For comparison, Table 3 summarizes the transmission performance of NRZ-OOK data carried by VCSELs in previous studies [2144]. To date, this study presents error-free NRZ-OOK transmission carried by a dual-mode VCSEL with data rates of 50, 53, and 56 Gbit/s that obtain corresponding BERs of 2.6×1015, 3.9×1012, and 2.3×1011, respectively, which pass the criterion of the telecom standard. The highest data rate of 61–69 Gbit/s is achieved by using a dual-mode VCSEL for data center applications. After the pre-emphasis process, the dual-mode VCSEL carries the NRZ-OOK data stream at 66 Gbit/s in this work. For error-free data transmission that passes the telecom standard, the allowable data rate is 63 Gbit/s.

 figure: Fig. 13.

Fig. 13. Benchmarks of data rate versus (a) oxide aperture and (b) modulation bandwidth for high-speed VCSELs reported in previous work.

Download Full Size | PDF

Tables Icon

Table 3. Benchmarks of Data Rate versus Oxide Aperture and Modulation Bandwidth for High-Speed VCSELs Reported in Previous Works

A comparison of the coupled power and encoded bandwidth of optical data streams delivered by SM, FM, and MM VCSELs over SMF or MMF transmission is summarized in Table 4 [10,14,15,26,35,4354]. A parametric comparison reveals that the FM-VCSEL can provide a higher encoding bandwidth than the MM-VCSEL for data transmission over MMF. The FM-VCSEL can also deliver a larger coupling power than the SM-VCSEL and benefit from better SNR and BER at the same encoding data rate. A transmission channel range within several hundred meters for short-reached data centers has been executed by the VCSEL-MMF link over one decade.

Tables Icon

Table 4. Comparison of the Coupled Power and Bandwidth of SM, FM, and MM VCSELs in SMF or MMF Transmission

Tables Icon

Table 5. Simulation Parameters for the Proposed 850 nm VCSEL

Tables Icon

Table 6. Simulation Parameters for p-Type Distributed Bragg Reflectors

Tables Icon

Table 7. Simulation Parameters for Multiple Quantum Wells

Tables Icon

Table 8. Simulation Parameters for n-type Distributed Bragg Reflectors

To extend the coverage between intra- and inter-data centers with the same link from 500 m to 10 km in the future [55], an MMF may induce extremely large modal dispersion, degrading the transmission performance, and either the SMF-28 or the GI-SMF is considered as a replacement for transmission distance expansion. In the comparison between the GI-SMF and MMF, the GI-SMF exhibits lower propagation loss and modal dispersion than those for the MMF at 850 nm [56]. In addition, the GI-SMF has higher modal bandwidth than the MMF [56]. Therefore, the BER performance of VCSEL delivered data under GI-SMF transmission is better than that under MMF transmission, even though the GI-SMF at 850 nm also provides LP01 and LP11 modes. Recently, SMF or GI-SMF transmission by FM or SM VCSELs has been demonstrated [15,5052]. A transmission distance of several kilometers can be achieved. In this work, the lensed MMF is employed to receive as much VCSEL data power as possible, and the GI-SMF is added for less dispersion than the MMF for distant transmission. Such a coupling architecture provides an alternative approach for future intra-data-center applications, as coupling loss between the MMF and SMF can be effectively decreased. In 2016, Lavrecik et al. used the five-tap feed-forward equalizer (FFE) filter to optimize each bit rate and the nine-tap RC pulse shape filter at the transmitter to reduce the spectral occupancy for obtaining the 90 and 102 Gbit/s two-level pulse-amplitude modulation (PAM-2) transmission over 50 m OM5 MMF at the error-free and KP4 criteria [57]. In addition, the same group employed the time-domain raised cosine and static five-tap FFE filters to optimize the response at the transmitter and receiver, individually, for the 168 Gbit/s PAM-4 transmissions over 50 m OM5 MMF [58,59]. In this work, the discrete-bandwidth pre-emphasis algorithm is simplified to pre-compensate for the whole channel response to take over the advanced data optimization from the previous reports. When combined with the artificial intelligence decision for pre-emphasizing the NRZ-OOK transmission in this work, the computing time of the machine learning procedure can be effectively suppressed for improving the bit rate and time lag in the future.

5. CONCLUSION

In summary, high-speed NRZ-OOK transmission at different bit rates and coupled output with lensed OM4 MMF or OM4 MMF + GI-SMF schemes using a dual-mode VCSEL device is demonstrated for future intra- and inter-data-center applications. By using the lensed OM4-MMF to collect the VCSEL output, the dual-mode VCSEL chip shows a threshold current of 0.72 mA and output power of 2.2 mW at 8 mA before saturation with a differential quantum efficiency of 0.38. When the In-dopant density in the active QW region is increased from In0.08Ga0.88As to In0.12Ga0.88As, the differential gain coefficient is increased from 1664 to 2000cm1. In addition, the 20% enhancement of differential gain also improves the high-speed characteristics of the dual-mode VCSEL. At highly biased conditions (with Ibias>10Ith), the dual-mode VCSEL only exhibits two obvious transverse modes. In addition, the coupled VCSEL output for the lensed OM4 MMF + 100 m GI-SMF coupling scheme shows a lower power coupling ratio of 0.26 and a smaller dP/dI of 0.35. During the performed analysis, a data waveform pre-emphasis operation was performed to compensate for the transmission channel response. In the BtB case, the pre-emphasized NRZ-OOK data carried by the dual-mode VCSEL at 50, 53, and 56 Gbit/s exhibits corresponding BERs of 2.6×1015, 3.9×1012, and 2.3×1011. The permissible NRZ-OOK data rate is increased up to 69 Gbit/s after executing the waveform pre-emphasis process. The dual-mode VCSEL guarantees error-free NRZ-OOK transmission with a BER<109 at 63 Gbit/s. For 69 Gbit/s NRZ-OOK transmission, the received BER of less than 2.6×105 is still lower than the forward-error correction criterion. When the OM4 MMF (1 m) + GI-SMF (100 m) link is used for future inter-data-center transmission, the transmission rate of pre-emphasized NRZ-OOK data is 51 Gbit/s with a BER of 2.2×107 and an SNR of 14.1 dB.

Appendix A: Formula to Simulate the Modulation Bandwidth of the VCSEL

Without considering the detailed Tromborg approach, the weighted longitudinal perturbation [CX(z)] of some quantity [X(z)] can be defined as

CX(z)=[jδWδk(z)k(z)δX(z)]/Wδω,
where k(z), W, and ω, respectively, denote the wave propagation constant, the Wronskian determinant, and the angular frequency, respectively. In addition, the transient modulation response of the optical power (P) and phase (ϕ) can be described by the shorthand notation of the dot product:
12P0dΔPdt=CNr·ΔN+CSr·ΔS,dΔϕdt=CNi·ΔN+CSi·ΔS,
where t and P0 denote the time and the initial power, respectively. In addition, N and S in Eq. (7) indicate the carrier and photon longitudinal profiles, respectively, and the r and i are the real and imaginary parts of the perturbation functions, respectively. Assuming the bias current as the modulation source, the current continuity equation at all z-points can be expressed as
dΔNdt=ΔJΔN/τR(N)υggΔS,
where J, τR(N), νg, and g denote the current density, carrier lifetime representing all recombination mechanisms except the stimulated emission, group velocity, and modal gain, respectively. Moreover, modulation without strong shape distortion of the photon density profile is assumed. The relationship between P (a scalar) and S can be expressed as
ΔS(z)/S0(z)=ΔP/P0,
where S0(z) denotes the initial photon longitudinal profile. An input modulation of ΔJ=J0(z)exp(jΩt) with J0 and Ω, respectively, denoting the peak amplitude of the basic signal and the angular frequency of the input modulation is assumed. Therefore, carrier density fluctuation can be eliminated to obtain a formula for representing the amplitude modulation response:
ΔP/P0=2CNr·ΔJ/(jΩ+1/τR)jΩ+2CNr·υggS0/(jΩ+1/τR)2CSr·S0.

In addition, the frequency modulation response is also derived from the imaginary terms of the perturbation functions. The frequency modulation response can be obtained as

Δω=dΔϕdt=CNi·ΔJjΩ+1/τR+[CSi·S0CNiυggS0jΩ+1/τR](ΔPP0).

Appendix B: Simulated Parameters of the Dual-Mode VCSEL

In Appendix B, the detailed parameters of the VCSEL structure are listed in Table 5. Based on these parameters, the optical bandwidth and gain of the VCSEL can be obtained via the simulation of Crosslight PICS3D software.

Funding

Ministry of Science and Technology, Taiwan (MOST 109-2221-E-002-184-MY3, MOST 109-2224-E-992-001-, MOST 110-2124-M-A49-003-, MOST 110-2221-E-002-100-MY3, MOST 110-2224-E-992-001-, MOST 111-2119-M-002-009-); Japan Society for the Promotion of Science (20F20374).

Acknowledgment

We would like to thank Prof. N. Holonyak Jr. and Prof. M. Feng of UIUC for giving us recommendations for high-speed VCSEL device design and fabrication and thank Prof. C. Chang-Hasnain of UC Berkeley for discussing the devices’ structures. C.-H. Cheng is supported by the International Research Fellow of Japan Society for the Promotion of Science (Postdoctoral Fellowships for Research in Japan [Standard]). Finally, we appreciate IQE plc. and Corning Inc. for funding support and Crosslight for providing the simulation tool.

Disclosures

The authors declare no conflicts of interest.

Data Availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

REFERENCES

1. IEEE, “Ethernet task force,” IEEE P802.3bs 400 Gb/s, http://www.ieee802.org/3/bs/ (2017).

2. X.-W. Chen and X. Lin, “Big data deep learning: challenges and perspectives,” IEEE Access 2, 514–525 (2014). [CrossRef]  

3. Y. Hayashi, T. Mukaihara, N. Hatori, N. Ohnoki, A. Matsutani, F. Koyama, and K. Iga, “Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure,” Electron. Lett. 31, 560–562 (1995). [CrossRef]  

4. D.-L. Huffaker, D.-G. Deppe, K. Kumar, and T.-J. Rogers, “Native-oxide defined ring contact for low-threshold vertical-cavity lasers,” Appl. Phys. Lett. 65, 97–99 (1994). [CrossRef]  

5. W.-W. Chow, K.-D. Choquette, M.-H. Crawford, K.-L. Lear, and G.-R. Hadley, “Design, fabrication, and performance of infrared and visible vertical-cavity surface emitting lasers,” IEEE J. Quantum Electron. 33, 1810–1823 (1997). [CrossRef]  

6. C.-C. Shen, T.-C. Hsu, Y.-W. Yeh, C.-Y. Kang, Y.-T. Lu, H.-W. Lin, H.-Y. Tseng, Y.-T. Chen, C.-Y. Chen, C.-C. Lin, C.-H. Wu, P.-T. Lee, Y. Sheng, C.-H. Chiu, and H.-C. Kuo, “Design, modeling, and fabrication of high-speed VCSEL with data rate up to 50 Gb/s,” Nanoscale Res. Lett. 14, 276 (2019). [CrossRef]  

7. C.-H. Cheng, C.-C. Shen, H.-Y. Kao, D.-H. Hsieh, H.-Y. Wang, Y.-W. Yeh, Y.-T. Lu, S.-W. Huang Chen, C.-T. Tsai, Y.-C. Chi, T. S. Kao, C.-H. Wu, H.-C. Kuo, P.-T. Lee, and G.-R. Lin, “850/940-nm VCSEL for optical communication and 3D sensing,” Opto-Electron. Adv. 1, 18000501 (2018). [CrossRef]  

8. A. Liu, P. Wolf, J. A. Lott, and D. Bimberg, “Vertical-cavity surface-em1itting lasers for data communication and sensing,” Photon. Res. 7, 121–136 (2019). [CrossRef]  

9. P. Westbergh, J.-S. Gustavsson, A. Haglund, M. Skold, A. Joel, and A. Larsson, “High speed low current density 850 nm VCSELs,” IEEE J. Sel. Top. Quantum Electron. 15, 694–703 (2009). [CrossRef]  

10. M. Feng, C.-H. Wu, and N. Holonyak, “Oxide-confined VCSELs for high-speed optical interconnects,” IEEE J. Quantum Electron. 54, 2400115 (2018). [CrossRef]  

11. C.-T. Tsai, C.-Y. Peng, C.-Y. Wu, C.-Y. Peng, S.-F. Lenong, H.-Y. Kao, H.-Y. Wang, Y.-W. Chen, Z.-K. Weng, H.-C. Kuo, J.-J. Huang, T.-C. Lee, T.-T. Shih, J.-J. Jou, W.-H. Cheng, C.-H. Wu, and G.-R. Lin, “Multi-mode VCSEL chip with high-indium-density InGaAs/AlGaAs quantum-well pairs for QAM-OFDM in multimode fiber,” IEEE J. Quantum Electron. 53, 2400608 (2017). [CrossRef]  

12. C. Xie, P. Dong, S. Randel, D. Pilori, P. Winzer, S. Spiga, B. Kogel, C. Neumeyr, and M.-C. Amann, “Single-VCSEL 100-Gb/s short-reach system using discrete multi-tone modulation and direct detection,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2015), paper Th2H.2.

13. C.-H. Wu, T.-Y. Huang, J. Qiu, W. Fu, C.-Y. Peng, T.-T. Shih, J.-J. Huang, H.-C. Kuo, G.-R. Lin, W.-H. Cheng, M. Feng, and C.-H. Wu, “50 Gb/s error-free data transmission using a NRZ-OOK modulated 850 nm VCSEL,” in Presented at the European Conference on Optical Communication (IEEE, 2018), pp. 1–3.

14. D. M. Kuchta, A. V. Rylyakov, F. E. Doany, C. L. Schow, J. E. Proesel, C. W. Baks, P. Westbergh, J. S. Gustavsson, and A. Larsson, “A 71-Gb/s NRZ modulated 850-nm VCSEL-based optical link,” IEEE Photon. Technol. Lett. 27, 577–580 (2015). [CrossRef]  

15. K. Li, X. Chen, J. E. Hurley, J. S. Stone, and M.-J. Li, “High data rate few-mode transmission over graded-index single-mode fiber using 850 nm single-mode VCSEL,” Opt. Express 27, 21395–21404 (2019). [CrossRef]  

16. PICS3D, Photonic Integrated Circuit Simulator in 3D (2018).

17. Tektronix Inc., 80SJARB and 80SJNB Jitter, Noise, and BER Analysis (2016).

18. Tektronix, “Measurement system signal integrity: important factors to consider: technical brief,” https://download.tek.com/document/55W-18024-3.pdf.

19. “Signal-to-noise ratio, keysight RFMW sitemap,” https://rfmw.em.keysight.com/DigitalPhotonics/flexdca/UG/Content/Topics/Eye%20Mask%20Mode/NRZ%20Measurements/nrz_signal_to_noise.htm.

20. Keysight Technologies, Transforming Oscilloscope Acquisitions for De-Embedding, Embedding and Simulating Channel Effects (2014).

21. D. M. Kuchta, P. Pepeljugoski, and Y. Kwark, “VCSEL modulation at 20 Gb/s over 200 m of multimode fiber using a 3.3 V SiGe laser driver IC,” in 2001 Digest of LEOS Summer Topical Meetings: Advanced Semiconductor Lasers and Applications/Ultraviolet and Blue Lasers and Their Applications/Ultralong Haul DWDM Transmission and Networking/WDM Compo (IEEE, 2001), p. 2.

22. R. H. Johnson and D. M. Kuchta, “30 Gb/s directly modulated 850 nm datacom VCSELs,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (CD) (Optical Society of America, 2008), paper CPDB2.

23. P. Westbergh, J. S. Gustavsson, Å. Haglund, A. Larsson, F. Hopfer, G. Fiol, D. Bimberg, and A. Joel, “32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL,” Electron. Lett. 45, 366–368 (2009). [CrossRef]  

24. P. Westbergh, J. S. Gustavsson, B. Kögel, Å. Haglund, A. Larsson, A. Mutig, A. Nadtochiy, D. Bimberg, and A. Joel, “40 Gbit/s error-free operation of oxide-confined 850 nm VCSEL,” Electron. Lett. 46, 1014–1016 (2010). [CrossRef]  

25. P. Westbergh, R. Safaisini, E. Haglund, B. Kögel, J. S. Gustavsson, A. Larsson, M. Geen, R. Lawrence, and A. Joel, “High-speed 850 nm VCSELs with 28 GHz modulation bandwidth operating error-free up to 44 Gbit/s,” Electron. Lett. 48, 1145–1147 (2012). [CrossRef]  

26. P. Westbergh, E. P. Haglund, E. Haglund, R. Safaisini, J. S. Gustavsson, and A. Larsson, “High-speed 850 nm VCSELs operating error free up to 57 Gbit/s,” Electron. Lett. 49, 1021–1023 (2013). [CrossRef]  

27. E. Haglund, P. Westbergh, J. S. Gustavsson, E. P. Haglund, A. Larsson, M. Geen, and A. Joel, “30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25–50 Gbit/s,” Electron. Lett. 51, 1096–1098 (2015). [CrossRef]  

28. A. Mutig, S. A. Blokhi, A. M. Nadtochiy, G. Fiol, J. A. Lott, V. A. Shchukin, N. N. Ledentsov, and D. Bimberg, “Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers,” Appl. Phys. Lett. 95, 131101 (2009). [CrossRef]  

29. S. A. Blokhin, J. A. Lott, A. Mutig, G. Fiol, N. N. Ledentsov, M. V. Maximov, A. M. Nadtochiy, V. A. Shchukin, and D. Bimberg, “Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s,” Electron. Lett. 45, 501–503 (2009). [CrossRef]  

30. F. Tan, M.-K. Wu, M. Liu, M. Feng, and N. Holonyak, “850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission,” IEEE Photon. Technol. Lett. 26, 289–292 (2013). [CrossRef]  

31. M. Liu, C. Y. Wang, M. Feng, and N. Holonyak, “850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85°C,” in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optical Society of America, 2016), paper SF1L.6.

32. J.-W. Shi, J.-C. Yan, J.-M. Wun, J. Chen, and Y.-J. Yang, “Oxide-relief and Zn-diffusion 850-nm vertical-cavity surface-emitting lasers with extremely low energy-to-data-rate ratios for 40 Gbit/s operations,” IEEE J. Sel. Top. Quantum Electron. 19, 7900208 (2012). [CrossRef]  

33. K.-L. Chi, J.-L. Yen, J.-M. Wun, J.-W. Jiang, I.-C. Lu, J. Chen, Y.-J. Yang, and J.-W. Shi, “Strong wavelength detuning of 850 nm vertical-cavity surface-emitting lasers for high-speed (>40 Gbit/s) and low-energy consumption operation,” IEEE J. Sel. Top. Quantum Electron. 21, 1701510 (2015). [CrossRef]  

34. K.-L. Chi, Y.-X. Shi, X.-N. Chen, J. Chen, Y.-J. Yang, J.-R. Kropp, N. Ledentsov Jr., M. Agustin, N. N. Ledentsov, G. Stepniak, J. P. Turkiewicz, and J.-W. Shi, “Single-mode 850-nm VCSELs for 54-Gb/s on–off keying transmission over 1-km multimode fiber,” IEEE Photon. Technol. Lett. 28, 1367–1370 (2016). [CrossRef]  

35. G. Stepniak, A. Lewandowski, J. R. Kropp, N. N. Ledentsov, V. A. Shchukin, N. Ledentsov Jr., G. Schaefer, M. Agustin, and J. P. Turkiewicz, “54 Gbit/s OOK transmission using single mode VCSEL up to 2.2 km MMF,” Electron. Lett. 52, 633–635 (2016). [CrossRef]  

36. J. P. Turkiewicz, Ł. Chorchos, V. A. Shchukin, V. M. Kalosha, J.-R. Kropp, M. Augustin, N. Ledentsov, and N. N. Ledentsov, “High speed transmission with 850 nm SM and MM VCSELs,” in 19th International Conference on Transparent Optical Networks (ICTON) (IEEE, 2017), pp. 1–4.

37. C.-Y. Peng, J. Qiu, T.-Y. Huang, C. H. Wu, M. Feng, and C.-H. Wu, “850-nm single-mode vertical-cavity surface emitting lasers for 40 Gb/s error-free transmission up to 500 m in OM4 fiber,” IEEE Electron Device Lett. 41, 84–86 (2020). [CrossRef]  

38. N. Ledentsov Jr., M. Agustin, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, K. L. Chi, Z. Khan, J. W. Shi, and N. N. Ledentsov, “Temperature stable oxide-confined 850 nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C,” Proc. SPIE 10552, 105520P (2018). [CrossRef]  

39. M.-J. Li, K. Li, X. Chen, S. K. Mishra, A. A. Juarez, J. E. Hurley, J. S. Stone, C.-H. Wang, H.-T. Cheng, C.-H. Wu, H.-C. Kuo, C.-T. Tsai, and G.-R. Lin, “Single-mode VCSEL transmission for short reach communications,” J. Lightwave Technol. 39, 868–880 (2021). [CrossRef]  

40. N. Ledentsov Jr., M. Agustin, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, K. L. Chi, Z. Khan, J. W. Shi, and N. N. Ledentsov, “50 Gb/s NRZ and 4-PAM data transmission over OM5 fiber in the SWDM wavelength range,” Proc. SPIE 10552, 1055202 (2018). [CrossRef]  

41. X. Chen, K. Li, J. S. Stone, and M.-J. Li, “Enhanced 850-nm SM VCSEL transmission by favorable chirp interaction with fiber dispersion,” AIP Adv. 11, 105104 (2021). [CrossRef]  

42. L. Chorchosa, N. Ledentsov Jr., M. Agustin, J.-R. Kropp, V. A. Shchukin, V. P. Kalosha, J. P. Turkiewicz, and N. N. Ledentsov, “A 50 Gbit/s net NRZ error-free 850 nm VCSEL based optical interconnect,” in 2019 IEEE Optical Interconnects Conference (OI) (IEEE, 2019), pp. 1–2.

43. H.-L. Wang, W. Fu, J. Qiu, and M. Feng, “850 nm VCSELs for 50 Gb/s NRZ error-free transmission over 100-meter OM4 and up to 115°C operation,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2019), paper W3A.1.

44. W.-C. Lo, W.-L. Wu, C.-H. Cheng, H.-Y. Wang, C.-T. Tsai, C.-H. Wu, and G.-R. Lin, “Effect of chirped dispersion and modal partition noise on multimode VCSEL encoded with NRZ-OOK and PAM-4 formats,” IEEE J. Sel. Top. Quantum Electron. 28, 1500409 (2022). [CrossRef]  

45. I.-C. Lu, C.-C. Wei, H.-Y. Chen, K.-Z. Chen, C.-H. Huang, K.-L. Chi, J.-W. Shi, F.-I. Lai, D.-H. Hsieh, H.-C. Kuo, W. Lin, S.-W. Chiu, and J. Chen, “Very high bit-rate distance product using high-power single-mode 850-nm VCSEL with discrete multitone modulation formats through OM4 multimode fiber,” IEEE J. Sel. Top. Quantum Electron. 21, 1701009 (2015). [CrossRef]  

46. R. Puerta, M. Agustin, L. Chorchos, J. Tonski, J.-R. Kropp, N. Ledentsov Jr., V. A. Shchukin, N. N. Ledentsov, R. Henker, I. T. Monroy, J. J. V. Olmos, and J. P. Turkiewicz, “107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2016), paper Th5B.5.

47. B. Wu, X. Zhou, Y. Ma, J. Luo, K. Zhong, S. Qiu, Z. Feng, Y. Luo, M. Agustin, N. Ledentsov Jr., J. Kropp, V. Shchukin, N. N. Ledentsov, I. Eddie, and L. Chao, “Close to 100 Gbps discrete multitone transmission over 100 m of multimode fiber using a single transverse mode 850 nm VCSEL,” Proc. SPIE 9766, 97660K (2016). [CrossRef]  

48. H.-Y. Kao, Y.-C. Chi, C.-T. Tsai, S.-F. Leong, C.-Y. Peng, H.-Y. Wang, J. J. Huang, J.-J. Jou, T.-T. Shih, H.-C. Kuo, W.-H. Cheng, C.-H. Wu, and G.-R. Lin, “Few-mode VCSEL chip for 100-Gb/s transmission over 100 m multimode fiber,” Photon. Res. 5, 507–515 (2017). [CrossRef]  

49. H.-Y. Kao, C.-T. Tsai, S.-F. Leong, C.-Y. Peng, Y.-C. Chi, J. J. Huang, H.-C. Kuo, T.-T. Shih, J.-J. Jou, W.-H. Cheng, C.-H. Wu, and G.-R. Lin, “Comparison of single-/few-/multi-mode 850 nm VCSELs for optical OFDM transmission,” Opt. Express 25, 16347–16363 (2017). [CrossRef]  

50. M. Li, X. Chen, K. Li, J. E. Hurley, and J. Stone, “Optical fiber for 1310 nm single-mode and 850 nm few-mode transmission,” Proc. SPIE 10945, 1094503 (2019). [CrossRef]  

51. A. A. Juarez, X. Chen, J. E. Hurley, M. Thiermann, J. Stone, and M.-J. Li, “Graded-index standard single-mode fiber for VCSEL transmission around 850 nm,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optical Society of America, 2019), paper M3C.2.

52. H. L. Wang, J. Qiu, X. Yu, W. Fu, and M. Feng, “The modal effect of VCSELs on transmitting data rate over distance in OM4 fiber,” IEEE J. Quantum Electron. 56, 8000106 (2020). [CrossRef]  

53. J. Qiu, D. Wu, H.-L. Wang, M. Feng, and X. Yu, “Advanced single-mode 850 nm VCSELs for record NRZ and PAM4 data rate on SMF-28 fiber up to 1 km,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2021), paper Tu5C.2.

54. T.-C. Hsu, Y.-W. Yeh, D. Yang, P.-T. Lee, and H.-C. Kuo, “Zn-diffusion few-mode VCSELs for 50-Gb/s GI-SMF transmission over 100 m at 850 nm wavelength,” in 26th Optoelectronics and Communications Conference (Optica Publishing Group, 2021), paper T3D.2.

55. Q. Cheng, M. Bahadori, M. Glick, S. Rumley, and K. Bergman, “Recent advances in optical technologies for data centers: a review,” Optica 5, 1354–1370 (2018). [CrossRef]  

56. S.-Y. Lee, X. Chen, W.-C. Lo, K. Li, C.-H. Wang, C.-T. Tsai, C.-H. Cheng, C.-H. Wu, H.-C. Kuo, M.-J. Li, and G.-R. Lin, “850-nm dual-mode VCSEL carried 53-Gbps NRZOOK transmission in 100-m graded-index single mode fiber,” in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2021), paper Tu5C.3.

57. J. Lavrencik, S. Varughese, V. A. Thomas, J. S. Gustavsson, E. Haglund, A. Larsson, and S. E. Ralph, “102 Gbps PAM-2 over 50 m OM5 fiber using 850 nm multimode VCSELs,” in 2019 IEEE Photonics Conference (IPC) (IEEE, 2019), pp. 1–2.

58. J. Lavrencik, S. Varughese, N. Ledentsov, Ł. Chorchos, N. N. Ledentsov, and S. E. Ralph, “168 Gbps PAM-4 multimode fiber transmission through 50 m using 28 GHz 850 nm multimode VCSELs,” in Optical Fiber Communication Conference (OFC), OSA Technical Digest (Optical Society of America, 2020), paper W1D.3.

59. N. N. Ledentsov, V. A. Shchukin, V. P. Kalosha, N. Ledentsov Jr., Ł. Chorchos, J. P. Turkiewicz, U. Hecht, P. Kurth, F. Gerfers, J. Lavrencik, S. Varughese, and S. E. Ralph, “Optical interconnects using single-mode and multi-mode VCSEL and multi-mode fiber,” in Optical Fiber Communication Conference (OFC), OSA Technical Digest (Optical Society of America, 2020), paper M3D.1.

Data Availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (13)

Fig. 1.
Fig. 1. (a) Heavy hole and light hole conduction band at different indium compositions. Optical bandwidths of (b) In0.08Ga0.92As and (c) In0.12Ga0.88As QW VCSELs. D-factors of (d) In0.08Ga0.92As and (e) In0.12Ga0.88As QW VCSELs. Simulated gain spectra of (f) In0.08Ga0.92As and (g) In0.12Ga0.88As QW VCSELs.
Fig. 2.
Fig. 2. (a) Schematic illustration of the fabricated dual-mode VCSEL structure. (b) Top-view SEM image of the fabricated VCSEL. (c) Cross-sectional SEM image of the Zn-diffusion region in the device.
Fig. 3.
Fig. 3. (a) Experimental setup for NRZ-OOK transmission carried by the fabricated dual-mode VCSEL in BtB and 100 m GI-SMF links. (b) Top-view microscopic photograph of the VCSEL chip. (c) Top-view microscopic photograph of the GS microwave probe touching the VCSEL chip. (d) Top-view microscopic photograph of the VCSEL chip light-emission. (e) Top-view microscopic photograph of the lensed fiber probe collecting the light-emission of the VCSEL chip.
Fig. 4.
Fig. 4. Schematic diagrams of the measured and simulated system in the pre-emphasis process.
Fig. 5.
Fig. 5. (a) PI and dP/dI responses. (b) VI and dV/dI responses of the dual-mode VCSEL.
Fig. 6.
Fig. 6. Coupling powers and optical spectra of the dual-mode VCSEL received by the lensed OM4-MMF in (a) BtB and (b) 100 m GI-SMF conditions.
Fig. 7.
Fig. 7. Optical spectra of the VCSEL operated under different bias currents at lensed MMF (top) and lensed MMF + GI-SMF (bottom) outputs.
Fig. 8.
Fig. 8. Frequency response of the dual-mode VCSEL under different biasing currents.
Fig. 9.
Fig. 9. Eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL in the BtB case with and without the pre-emphasis process under data rates of 50, 53, and 56 Gbit/s.
Fig. 10.
Fig. 10. (a) Eye diagrams and (b) BER and SNR of NRZ-OOK transmission carried by the dual-mode VCSEL in the BtB case with the pre-emphasis process under different data rates (between 61 and 69 Gbit/s).
Fig. 11.
Fig. 11. Eye diagrams of NRZ-OOK transmission carried by the dual-mode VCSEL in BtB and 100 m GI-SMF cases under different data rates.
Fig. 12.
Fig. 12. Eye diagrams of 50 Gbit/s NRZ-OOK data carried by dual-mode VCSEL in BtB, 100 m OM4 MMF, and 100 m GI-SMF cases.
Fig. 13.
Fig. 13. Benchmarks of data rate versus (a) oxide aperture and (b) modulation bandwidth for high-speed VCSELs reported in previous work.

Tables (8)

Tables Icon

Table 1. Key Parameters of Pre-emphasized NRZ-OOK Data Carried by the Dual-Mode VCSEL before and after 100 m GI-SMF Transmission

Tables Icon

Table 2. Key Parameters of NRZ-OOK Data Stream Carried by the Dual-Mode VCSEL before and after the SMF Link with the Pre-emphasis Process

Tables Icon

Table 3. Benchmarks of Data Rate versus Oxide Aperture and Modulation Bandwidth for High-Speed VCSELs Reported in Previous Works

Tables Icon

Table 4. Comparison of the Coupled Power and Bandwidth of SM, FM, and MM VCSELs in SMF or MMF Transmission

Tables Icon

Table 5. Simulation Parameters for the Proposed 850 nm VCSEL

Tables Icon

Table 6. Simulation Parameters for p-Type Distributed Bragg Reflectors

Tables Icon

Table 7. Simulation Parameters for Multiple Quantum Wells

Tables Icon

Table 8. Simulation Parameters for n-type Distributed Bragg Reflectors

Equations (11)

Equations on this page are rendered with MathJax. Learn more.

SNR=M1-levelM0-levelσ1-level+σ0-level,
{Hchannel(f)=Vchannel(f)VAWG(f)Htotal(f)=VVCSEL(f)VAWG(f)·Vchannel(f)VAWG(f)=HVCSEL(f)·Hchannel(f),
{HVCSEL(f)=Htotal(f)Hchannel(f)VVCSEL(f)=VAWG(f)·HVCSEL(f)=VAWG(f)·Htotal(f)Hchannel(f).
{Vpreemphasis(f)=VAWG(f)·Hpreemphasis(f)VVCSEL(f)=Vpreemphasis(f)·Htotal(f)=[VAWG(f)·Hpreemphasis(f)]·Htotal(f)=[VAWG(f)·Hchannel1(f)]·Htotal(f).
Hpreemphasis(f)={FFT[hchannel(t)]}1,Vpreemphasis(f)=VAWG(f)/FFT[hchannel(t)],
CX(z)=[jδWδk(z)k(z)δX(z)]/Wδω,
12P0dΔPdt=CNr·ΔN+CSr·ΔS,dΔϕdt=CNi·ΔN+CSi·ΔS,
dΔNdt=ΔJΔN/τR(N)υggΔS,
ΔS(z)/S0(z)=ΔP/P0,
ΔP/P0=2CNr·ΔJ/(jΩ+1/τR)jΩ+2CNr·υggS0/(jΩ+1/τR)2CSr·S0.
Δω=dΔϕdt=CNi·ΔJjΩ+1/τR+[CSi·S0CNiυggS0jΩ+1/τR](ΔPP0).
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.