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InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter: publisher’s note

Anna Kafar, Szymon Stanczyk, Marcin Sarzynski, Szymon Grzanka, Jakub Goss, Irina Makarowa, Anna Nowakowska-Siwinska, Tadek Suski, and Piotr Perlin

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Abstract

This publisher’s note reports the revision of the funding section in Photon. Res. 5, A30 (2017) [CrossRef]  .

© 2018 Chinese Laser Press

 The Funding Section in the article [1] appears as

Narodowe Centrum Nauki (NCN) (2014/15/B/ST3/04252); Narodowe Centrum Badańi Rozwoju (NCBR) (1/POLBER-1/2014).

It is revised with a grant No. “2013/11/N/ST7/02714” added. The Funding Section should be as follows:

Narodowe Centrum Nauki (NCN) (2013/11/N/ST7/02714, 2014/15/B/ST3/04252); Narodowe Centrum Badańi Rozwoju (NCBR) (1/POLBER-1/2014).

The article [1] was corrected online as of 17 May 2018.

Reference

1. A. Kafar, S. Stanczyk, M. Sarzynski, S. Grzanka, J. Goss, I. Makarowa, A. Nowakowska-Siwinska, T. Suski, and P. Perlin, “InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter,” Photon. Res. 5, A30–A34 (2017). [CrossRef]  

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