Abstract
We compare the Autler–Townes (AT)-splitting in ${{\rm Eu}^{3 + }}{:}{{\rm YPO}_4}$, ${{\rm Pr}^{3 + }}{:}{{\rm YPO}_4}$, and ${{\rm Pr}^{3 + }}{:}{{\rm Y}_2}{{\rm SiO}_5}$ crystals. The AT-splitting in ${{\rm Pr}^{3 + }}{:}{{\rm Y}_2}{{\rm SiO}_5}$ is stronger than other two-doped crystals, while the ${{\rm Pr}^{3 + }}$ ion has a stronger dressing than the ${{\rm Eu}^{3 + }}$ ion in a host material of YPO. The stronger dressing in YSO is attributed to the ${{\rm C}_{2h}}$ symmetry of the YSO crystal and its nondegeneracy, making the dressing sensitive to doped material. By investigating the relationship between spectral AT-splitting (SAT-splitting) and temporal AT-splitting (TAT-splitting), we observed that TAT-splitting depends upon the dressing effect and phonon-assisted nonradiative transition whereas SAT-splitting results only from the dressing effect. Based on our results, we proposed a model for an optical router and transistor (amplifier and switch). The router action results from the SAT- and TAT-splitting while the transistor was realized by a switch from bright to dark dressed states.
© 2019 Optical Society of America
Full Article | PDF ArticleMore Like This
Jinyang Li, Jianfeng Zhu, Muhammad Imran, Huanrong Fan, Anas Mujahid, Faisal Nadeem, Peng Li, and Yanpeng Zhang
Opt. Lett. 47(9) 2310-2313 (2022)
Noor Ahmed, Ghulam Abbas Khan, Ruimin Wang, Jingru Hou, Rui Gong, Lingmeng Yang, and Yanpeng Zhang
Opt. Lett. 42(9) 1788-1791 (2017)
Feng Wen, Imran Ali, Abdulkhaleq Hasan, Changbiao Li, Haijun Tang, Yufei Zhang, and Yanpeng Zhang
Opt. Lett. 40(20) 4599-4602 (2015)