Abstract
In this Letter, a new approach to fabricating a high-efficiency vertical-structured InGaN micro-pixelated light-emitting diode (μVLED) is presented. The high-resistivity selective areas are intentionally created in the n-GaN layer through a fluorine (F) ion-implantation process and then used as the electrical isolation regions for realizing a μVLED array consisting of pixels with a diameter of 10 μm. The results prove that the dual-energy ion implantations not only can improve the uniformity of carrier distribution but also can effectively prevent current from leaking along the etched sidewalls, which in turn realize a more efficient carrier injection into the mesa area. More notably, the current-handling capability and corresponding optical output power density of the μVLED array are substantially higher than those of conventional vertical-structured broad-area LEDs. A measured output light power density of the ion-implanted μVLED array reaches a maximum value of at , before power saturation. The improved luminescence performances of the μVLED array can be attributed to an effective ion-induced heat relaxation and associated lower junction temperature.
© 2019 Optical Society of America
Full Article | PDF ArticleMore Like This
Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, and Kazuhiro Ohkawa
Opt. Lett. 46(20) 5092-5095 (2021)
Feng Xu, Yi Tan, Zili Xie, and Baoshun Zhang
Opt. Express 29(5) 7757-7766 (2021)
Chunshuang Chu, Yaru Jia, Sheng Hang, Yongfei Chen, Tong Jia, KangKai Tian, Yonghui Zhang, and Zi-Hui Zhang
Opt. Lett. 48(22) 5863-5866 (2023)