Abstract
Se-doped silicon was prepared using deposited Si-Se bilayer thin films followed by femtosecond-laser irradiation. photodiodes were fabricated from this material for the first time, to the best of our knowledge. The effects of the annealing temperature and the reverse bias voltage on the near-infrared responsivity were investigated. The photodiode exhibits optimal rectification and photoresponse at an annealing temperature of 500°C. At a 12 V bias, a responsivity of 2.41 A/W at 1064 nm is obtained. The linear increase at bias from 0 to 10 V and faster-than-linear increase at bias from 10 to 12 V for the responsivity are observed with the increase of the bias voltage. The results suggest that the gain mechanism is most likely to be a photoconductive gain.
© 2016 Optical Society of America
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